125NS(R)
Naina Semiconductor Ltd.
Standard Recovery Diodes (Stud and Flat Base Type), 125A
Features
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Diffused Series
High Current Surge Capability
Available in Normal and Reverse polarity
Metric and UNF thread type
Electrical Specifications (TA = 25oC, unless otherwise noted)
Symbol
Parameters
Values Units
IF(AV)
Maximum avg. forward current @ TA = 150oC
125
1.3
A
V
A
Maximum peak forward voltage drop @
rated IF(AV)
VFM
IFSM
I2t
Maximum peak one cycle (non-rep) surge
current @ 10 msec
Maximum I2t rating (non-rep) for 5 to 10
2600
30000 A2sec
msec
DO-205AA (DO-8)
Voltage Ratings (TA = 25oC, unless otherwise noted)
VRRM, Maximum
repetitive peak
reverse voltage
(V)
VR(RMS), Maximum
IR(AV), Maximum
avg. reverse
leakage current
(µA)
VR, Maximum
Recommended RMS
working voltage
(V)
RMS reverse
voltage
(V)
Type
number
Voltage
Code
DC blocking
voltage
(V)
10
20
100
200
70
140
280
420
560
700
840
980
1120
100
200
40
80
40
400
400
160
240
320
400
480
560
640
60
600
600
125NS(R)
80
800
800
200
100
120
140
160
1000
1200
1400
1600
1000
1200
1400
1600
Thermal & Mechanical Specifications (TA = 25oC, unless otherwise noted)
Symbol
Rth(JC)
TJ
Parameters
Maximum thermal resistance, junction to case
Operating junction temperature range
Storage temperature
Values
0.3
Units
oC/W
oC
-65 to 150
-65 to 200
2.0 (min) – 3.0 (max)
150
Tstg
oC
F
Mounting torque (non-lubricated threads)
Approximate allowable weight
W
G
1
D-95, Sector 63, Noida – 201301, India
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Tel: 0120-4205450
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Fax: 0120-4273653
sales@nainasemi.com
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www.nainasemi.com