Datasheet > SKM300GM12T4

SKM300GM12T4

更新时间： 2024-02-16 07:00:10

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
5页	324K
描述
Fast IGBT4 Modules

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中文翻译

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SKM300GM12T4 数据手册

SKM300GM12T4

Absolute Maximum Ratings

Symbol Conditions

Values

Unit

IGBT

V_CES

1200

422

T_c= 25 °C

T_c= 80 °C

I_C

T_j= 175 °C

324

I_Cnom

300

I_CRM

I_CRM= 3xI_Cnom

900

V_GES

-20 ... 20

SEMITRANS^®3

V_CC= 800 V

V_GE≤ 15 V

V_CES≤ 1200 V

T_j= 150 °C

t_psc

µs

°C

T_j

-40 ... 175

Fast IGBT4 Modules

SKM300GM12T4

Inverse diode

T_c= 25 °C

T_c= 80 °C

I_F

353

264

T_j= 175 °C

I_Fnom

I_FRM

I_FSM

T_j

300

I_FRM= 3xI_Fnom

t_p= 10 ms, sin 180°, T_j= 25 °C

900

Features

• V_CE(sat)with positive temperature

coefficient

1548

-40 ... 175

°C

• High short circuit capability, self

limiting to 6 x Icnom

Module

I_t(RMS)

T_stg

500

-40 ... 125

4000

°C

• Fast & soft inverse CAL diodes

• Large clearance (10 mm) and

creepage distances (20 mm)

• Isolated copper baseplate using DBC

Technology (Direct Copper Bonding)

V_isol

AC sinus 50Hz, t = 1 min

Characteristics

Symbol Conditions

IGBT

min.

typ.

max.

Unit

Typical Applications

• Matrix Inverter

I_C= 300 A

V_CE(sat)

T_j= 25 °C

1.85

2.25

2.1

_GE= 15 V

T_j= 150 °C

2.45

chiplevel

Remarks

• Case temperature limited to

T_c= 125°C max, recomm.

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

0.8

0.7

3.5

5.2

5.8

0.1

0.9

0.8

4.0

5.5

6.5

0.3

_op= -40 ... +150°C, product

mΩ

V_GE= 15 V

rel. results valid for T_j= 150°

V_GE(th)

I_CES

V_GE=V_CE, I_C= 12 mA

T_j= 25 °C

Ω

V_GE= 0 V

_CE= 1200 V

T_j= 150 °C

f = 1 MHz

C_ies

C_oes

C_res

Q_G

17.6

1.16

0.94

1700

2.5

V_CE= 25 V

_GE= 0 V

V_GE= - 8 V...+ 15 V

T_j= 25 °C

R_Gint

t_d(on)

t_r

T_j= 150 °C

200

V_CC= 600 V

I_C= 300 A

_GE= ±15 V

E_on

t_d(off)

t_f

_{G on}= 1.5 Ω

_{G off}= 1.5 Ω

450

di/dt_on= 7500 A/µs

di/dt_off= 3350 A/µs

E_off

R_th(j-c)

K/W

per IGBT

0.11

Rev. 0 – 22.06.2009

12 3 4 5

中文翻译

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