Datasheet > SKM350MB120SCH15

SKM350MB120SCH15

更新时间： 2024-11-06 14:57:27

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		/
页数	文件大小	规格书
8页	968K
描述
SiC Modules SEMITRANS 3 (106x62x31)

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中文翻译

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SKM350MB120SCH15 数据手册

SKM350MB120SCH15

Absolute Maximum Ratings

Symbol Conditions

Values

Unit

MOSFET

V_DSS

I_D

1200

478

380

T_c= 25 °C

T_c= 80 °C

T_j= 175 °C

I_DM

I_DRM

V_GS

T_j

1280

904

-6 ... 22

-40 ... 175

°C

SEMITRANS^®3

SiC MOSFET Module

SKM350MB120SCH15

Features*

Integrated body diode

I_FM

I_FRM

1280

904

Absolute Maximum Ratings

Symbol Conditions

Module

I_t(RMS)

T_stg

Values

Unit

500

-40 ... 125

4000

°C

• Full Silicon Carbide (SiC) power

module

module without TIM

AC sinus 50 Hz, t = 1 min

V_isol

• High reliability 2^ndGeneration SiC

MOSFETs

• Optimized for fast switching and lowest

power losses

• High humidity robustness (HV-H3TRB

proof)

• Insulated copper baseplate using DBC

technology (Direct Bonded Copper)

• Improved thermal performances with

Aluminium Nitride (AlN) substrate

• UL recognized, file no. E63532

Typical Applications

• High frequency power supplies

• AC inverters

• Traction APU

• EV Chargers

• Industrial Test Systems

Remarks

• Case temperature limited to T_C= 125°C

max.

• Recommended T_jop= -40 ... +150°C

• Gate-Source SURGE VOLTAGE

(t_surge<300ns), V_{GS_surge}= -10V ... +26V

Rev. 1.0 – 14.08.2020

12 3 4 5 6 7 8

中文翻译

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