Datasheet > SKM200GAL12E4_0906

SKM200GAL12E4_0906

更新时间： 2024-11-25 09:24:07

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
5页	352K
描述
IGBT4 Modules

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SKM200GAL12E4_0906 数据手册

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SKM200GAL12E4

Absolute Maximum Ratings

Symbol Conditions

Values

Unit

IGBT

V_CES

1200

314

T_c= 25 °C

T_c= 80 °C

I_C

T_j= 175 °C

242

I_Cnom

200

I_CRM

I_CRM= 3xI_Cnom

600

V_GES

-20 ... 20

SEMITRANS^®3

V_CC= 800 V

V_GE≤ 15 V

V_CES≤ 1200 V

T_j= 150 °C

t_psc

µs

°C

T_j

-40 ... 175

IGBT4 Modules

SKM200GAL12E4

Features

• IGBT4 = 4. Generation (Trench)IGBT

• VCEsat with positive temperature

coefficient

• High short circuit capability, self

limiting to 6 x I_CNOM

Inverse diode

T_c= 25 °C

T_c= 80 °C

I_F

229

172

T_j= 175 °C

I_Fnom

I_FRM

I_FSM

T_j

200

I_FRM= 3xI_Fnom

t_p= 10 ms, sin 180°, T_j= 25 °C

600

990

-40 ... 175

°C

Freewheeling diode

T_c= 25 °C

T_c= 80 °C

I_F

229

172

T_j= 175 °C

• Soft switching 4. Generation CAL

diode (CAL4)

I_Fnom

200

I_FRM

I_FSM

T_j

I_FRM= 3xI_Fnom

t_p= 10 ms, sin 180°, T_j= 25 °C

600

Typical Applications

• DC/DC – converter

• Brake chopper

990

-40 ... 175

°C

• Switched reluctance motor

• DC – motor

Module

I_t(RMS)

T_stg

500

-40 ... 125

4000

°C

Remarks

V_isol

AC sinus 50Hz, t = 1 min

• Case temperature limited to

T_c= 125°C max, recomm.

Characteristics

_op= -40 ... +150°C, product

Symbol Conditions

IGBT

min.

typ.

max.

Unit

rel. results valid for T_j= 150°

I_C= 200 A

V_CE(sat)

T_j= 25 °C

1.8

2.2

2.05

2.4

_GE= 15 V

T_j= 150 °C

chiplevel

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

0.8

0.7

5.0

7.5

5.8

0.1

0.9

0.8

5.8

8.0

6.5

0.3

mΩ

V_GE= 15 V

V_GE(th)

I_CES

V_GE=V_CE, I_C= 7.6 mA

T_j= 25 °C

Ω

V_GE= 0 V

_CE= 1200 V

T_j= 150 °C

f = 1 MHz

C_ies

C_oes

C_res

Q_G

12.3

0.81

0.69

1130

3.8

V_CE= 25 V

_GE= 0 V

V_GE= - 8 V...+ 15 V

T_j= 25 °C

R_Gint

GAL

Rev. 2 – 16.06.2009

12 3 4 5

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