Datasheet > SKCD81C060I3_10

SKCD81C060I3_10

更新时间： 2024-11-14 09:24:27

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		二极管
页数	文件大小	规格书
2页	196K
描述
CAL-DIODE

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中文翻译

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数据手册

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SKCD81C060I3_10 数据手册

SKCD 81 C 060 I3

Absolute Maximum Ratings

Symbol Conditions

Values

Unit

T_j= 25 °C, I_R= 0.3 mA

T_s= 80 °C, T_j= 150 °C

V_RRM

I_F(AV)

I_FSM

600

120

T_j= 25 °C

T_j= 150 °C

1550

1260

150

10 ms

sin 180°

T_jmax

°C

Electrical Characteristics

Symbol Conditions

CAL-DIODE

min.

typ.

max.

Unit

I_F= 150 A

i²t

I_R

7938

0.30

8.00

1.60

A²s

T_j= 150 °C, 10 ms, sin 180°

T_j= 25 °C, V_RRM= 600 V

V_RRM= 600 V

Size: 9 mm x 9 mm

T_j= 125 °C, V_RRM= 600 V

T_j= 25 °C, I_F= 155 A

T_j= 125 °C, I_F= 155 A

T_j= 125 °C

V_F

1.35

0.90

2.7

V_(TO)

r_T

SKCD 81 C 060 I3

T_j= 125 °C

mΩ

Dynamic Characteristics

Symbol Conditions

Features

• low forward voltage drop combined

with a low temperature dependence

• easy paralleling due to a small forward

voltage spread

• very soft recovery behavior

• small switching losses

min.

typ.

max.

Unit

T_j= 25 °C, 150 A, 300 V, 1000 A/µs

t_rr

µs

µC

T_j= 125 °C, 150 A, 300 V, 1000 A/µs

T_j= 25 °C, 150 A, 300 V, 1000 A/µs

T_j= 125 °C, 150 A, 300 V, 1000 A/µs

T_j= 25 °C, 150 A, 300 V, 1000 A/µs

T_j= 125 °C, 150 A, 300 V, 1000 A/µs

t_rr

Q_rr

I_rrm

• high ruggedness

8.5

• compatible to thick wire bonding

• compatible to all standard solder

processes

Typical Applications*

• freewheeling diode for IGBT

Thermal Characteristics

Symbol Conditions

min.

typ.

max.

Unit

T_j

-40

150

250

320

°C

T_stg

T_solder

10 min.

5 min.

sold. on 0,38 mm DCB, reference point

on copper heatsink close to the chip

R_th(j-s)

0.4

K/W

Mechanical Characteristics

Symbol Conditions

Values

Unit

Raster

size

9 x 9

mm²

Area total

Anode

bondable (Al)

Cathode

Wire bond

Package

solderable (Ag/Ni)

Al, diameter ≤ 500 µm

wafer frame

Chips /

Package

116 (5" Wafer)

pcs

SKCD

Rev. 0 – 18.02.2010

中文翻译

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