Datasheet > SK25GD12T7ETE1

SK25GD12T7ETE1

更新时间： 2024-11-05 20:06:19

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		栅
页数	文件大小	规格书
5页	285K
描述
Insulated Gate Bipolar Transistor,

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中文翻译

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技术参数
数据手册

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SK25GD12T7ETE1 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
Base Number Matches：	1

SK25GD12T7ETE1 数据手册

SK25GD12T7ETE1

Absolute Maximum Ratings

Symbol Conditions

IGBT 1

Values

Unit

T_j= 25 °C

V_CES

I_C

1200

-20 ... 20

T_s= 25 °C

T_s= 70 °C

T_s= 25 °C

T_s= 70 °C

λ_paste=0.8 W/(mK)

T_j= 175 °C

I_C

λ_paste=2.5 W/(mK)

T_j= 175 °C

I_Cnom

I_CRM

V_GES

SEMITOP^®E1

I_CRM= 2 x I_Cnom

V_CC= 800 V

IGBT module

t_psc

T_j

_GE≤ 15 V

_CES≤ 1200 V

T_j= 175 °C

µs

°C

Evaluation Sample

SK25GD12T7ETE1

Target Data

-40 ... 175

Absolute Maximum Ratings

Symbol Conditions

Diode 1

Values

Unit

Features*

• Low inductive design

• Press-Fit contact technology

• Rugged mounting due to integrated

mounting clamps

• Heat transfer and insulation through

direct copper bonded aluminium oxide

ceramic (DBC)

• Trenchstop7 IGBT technology

• Robust and soft switching CAL4F

diode technology

• Integrated NTC temperature sensor

• UL recognized file no. E 63 532

T_j= 25 °C

V_RRM

I_F

1200

100

-40 ... 175

T_s= 25 °C

T_s= 70 °C

T_s= 25 °C

T_s= 70 °C

λ_paste=0.8 W/(mK)

T_j= 175 °C

I_F

λ_paste=2.5 W/(mK)

T_j= 175 °C

I_Fnom

I_FRM

I_FSM

I_FRM= 2 x I_Fnom

10 ms

sin 180°

T_j= 25 °C

T_j= 150 °C

T_j

°C

Typical Applications

• Motor drives

• Servo drives

• Air conditioning

• Auxiliary Inverters

• UPS

Absolute Maximum Ratings

Symbol Conditions

Module

Values

Unit

∆T_terminalat PCB joint = 30 K, per pin

I_t(RMS)

T_stg

-40 ... 125

2500

°C

V_isol

AC, sinusoidal, t = 1 min

GD-ET

Rev. 0.2 – 12.02.2020

12 3 4 5

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