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SIM150D06AV1 PDF预览

SIM150D06AV1

更新时间: 2024-11-21 03:31:59
品牌 Logo 应用领域
SEMIWELL 双极性晶体管
页数 文件大小 规格书
4页 186K
描述
“HALF-BRIDGE” IGBT MODULE

SIM150D06AV1 数据手册

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SIM150D06AV1  
Preliminary  
VCES = 600V  
Ic=150A  
“HALF-BRIDGE” IGBT MODULE  
Feature  
Applications  
VCE(ON) typ. = 1.5V  
@Ic=150A  
Smart field stopper +Trench Motor controls  
design technology  
Low VCE (sat)  
VVVF inverters  
Inverter-type welding MC over 18KHZ  
SMPS, Electrolysis  
Low Turn-off losses  
Short tail current for over 20KHz  
UPS/EPS, Robotics  
Package : V1  
Absolute Maximum Ratings @ Tj=25(Per Leg)  
Symbol  
Parameter  
Condition  
Ratings  
Unit  
VCES  
VGES  
IC  
Collector-to-Emitter Voltage  
TC = 25℃  
600  
± 20  
150 (210)  
300  
V
V
Gate emitter voltage  
Continuous Collector Current  
Pulsed collector current  
TC = 80℃ (25℃)  
TC = 25℃  
A
ICP  
A
IF  
Diode Continuous Forward Current  
Diode Maximum Forward Current  
Short circuit test, VGE = 15V, VCC = 360V  
Isolation Voltage test  
TC = 80℃ (25℃)  
TC = 25℃  
150 (210)  
300  
A
IFM  
A
tp  
TC = 150℃ (25℃)  
AC @ 1 minute  
6 (8)  
V
Viso  
Tj  
2500  
Junction Temperature  
-40 ~ 150  
-40 ~ 125  
190  
g
Tstg  
Weight  
Md  
Td  
Storage Temperature  
Weight of Module  
Mounting torque with screw : M5  
Terminal connection torque : M5  
2.0  
N.m  
N.m  
2.0  
Static Characteristics @ Tj = 25(unless otherwise specified)  
Parameters  
Min  
Typ  
Max  
Unit  
Test conditions  
VCE(ON)  
VGE(th)  
ICES  
Collector-to-Emitter Saturation Voltage  
Gate Threshold Voltage  
1.50  
5.8  
1.95  
6.5  
5.0  
400  
1.9  
IC = 150A, VGE = 15V  
VCE = VGE, IC = 4㎃  
VGE = 0V, VCE = 600V  
VCE = 0V, VGE = 20V  
IF = 150A  
V
Zero Gate Voltage Collector Current  
Gate-to-Emitter Leakage Current  
Forward voltage drop  
V
IGES  
VF  
1.6  
2
RGINT  
Integrated gate resistor  
- 1 -  

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