Datasheet > SIM150D12SV3

SIM150D12SV3

更新时间： 2024-11-21 02:57:39

品牌	Logo	应用领域
SEMIWELL		双极性晶体管
页数	文件大小	规格书
8页	503K
描述
“HALF-BRIDGE” IGBT Module

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中文翻译

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数据手册

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SIM150D12SV3 数据手册

SIM150D12SV3

Preliminary

VCES = 1200V

Ic = 150A

“HALF-BRIDGE” IGBT Module

V^CE(ON)typ. = 2.7V

@ Ic = 150A

Features

Applications

▪ Update NPT Technology design

▪ 10µs Short circuit capability

▪ Low turn-off loss

▪ SMPS & Electrolysis Machine

▪ High Power Inverters

▪ High Frequency inverter-type

Welding machines

▪ Short tail current for over 18KHz

▪ Positive VCE(on)

▪ Servo Controls

PKG V3 62 mm

temperature coefficient

▪ UPS, EPS or Robotics

Absolute Maximum Ratings @ Tj=25℃ (per leg)

Symbol

Parameter

Condition

Ratings

Unit

Collector-to-Emitter Voltage

1200

VCES

VGE = 0V, IC = 1.0mA

Gate emitter voltage

± 20

150

VGES

Continuous Collector Current

Pulsed collector current

Diode Continuous Forward Current

Diode Maximum Forward Current

Short Circuit Withstand Time

Isolation Voltage test

TC = 80℃

300

ICM

150

300

IFM

TSC

µs

AC 1 minute

2500

-40 ~ 150

-40 ~ 125

360

Viso

Junction Temperature

℃

Storage Temperature

Tstg

Weight of Module

Weight

Mounting

Torque

Power Terminal Screw : M5

Terminal connection Screw : M5

3.5

Electrical Characteristics @ Tj = 25℃ (unless otherwise specified)

Symbol

Parameters

Min

Typ

Max

Unit

Test conditions

V(BR)CES

VCE(ON)

VGE(th)

ICES

Collector-to-Emitter Breakdown Voltage

Collector-to-Emitter Saturation Voltage

Gate Threshold Voltage

1200

2.7

5.0

VGE = 0V, IC = 1.0mA

IC = 150A, VGE = 15V

VCE = VGE, IC = 500µA

VGE = 0V, VCE = 1200V

VCE = 0V, VGE = ± 20V

IC = 150A

3.1

6.0

1.0

± 200

2.4

Zero Gate Voltage Collector Current

Gate-to-Emitter Leakage Current

Diode Forward Voltage Drop

IGES

VFM

2.1

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中文翻译

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