Datasheet > SIM200D12SV3

SIM200D12SV3

更新时间： 2024-11-06 06:11:43

品牌	Logo	应用领域
SEMIWELL		双极性晶体管
页数	文件大小	规格书
7页	492K
描述
HALF-BRIDGE IGBT MODULE

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中文翻译

获取价格

数据手册

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SIM200D12SV3 数据手册

SIM200D12SV3

Preliminary

VCES = 1200V

Ic = 200A

“HALF-BRIDGE” IGBT MODULE

V^CE(ON)typ. = 1.7V

@ Ic = 200A

Features

Applications

▪Trench gate + field stopper, using

Infineon chip design

▪ AC & DC Motor controls

▪ VVVF inverters

▪ 10µs Short circuit capability

▪ Low turn-off losses

▪ Optimized for high frequency inverter

Type Welding machines

▪ SMPS

▪ Short tail current for over 18KHz

▪ Positive VCE(on)

Package : V3

▪ UPS, Robotics

temperature coefficient

Absolute Maximum Ratings @ Tj=25℃ (per leg)

Symbol

Parameter

Condition

Ratings

Unit

Collector-to-Emitter Voltage

1200

VCES

VGE = 0V, IC = 1.0mA

Gate emitter voltage

± 20

200(260)

400

VGES

Continuous Collector Current

Pulsed collector current

Diode Continuous Forward Current

Diode Maximum Forward Current

Short Circuit Withstand Time

Isolation Voltage test

TC = 80℃(25℃)

TC = 25℃

ICM

TC = 80℃(25℃)

Tc=25℃

200(260)

400

IFM

µs

TSC

AC 1 minute

2500

Viso

Junction Temperature

-40 ~ 150

-40 ~ 125

360

℃

Storage Temperature

Tstg

Weight of Module

Weight

Mounting

Torque

Power Terminal Screw : M5

Terminal connection Screw : M5

3.5

Electrical Characteristics @ Tj = 25℃ (unless otherwise specified)

Symbol

Parameters

Min

Typ

Max

Unit

Test conditions

V(BR)CES

VCE(ON)

VGE(th)

ICES

Collector-to-Emitter Breakdown Voltage

Collector-to-Emitter Saturation Voltage

Gate Threshold Voltage

1200

1.4

5.0

1.7

5.8

VGE = 0V, IC = 1.0mA

IC = 200A, VGE = 15V

VCE = VGE, IC = 500µA

VGE = 0V, VCE = 1200V

VCE = 0V, VGE = ± 20V

2.15

6.5

Zero Gate Voltage Collector Current

Gate-to-Emitter Leakage Current

1.0

± 200

IGES

- 1 -

12 3 4 5 6 7

中文翻译

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