Datasheet > SIHP22N60EF-GE3

SIHP22N60EF-GE3

更新时间： 2024-01-23 11:19:42

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	131K
描述
Power Field-Effect Transistor,

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技术参数
数据手册

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SIHP22N60EF-GE3 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	Factory Lead Time：	19 weeks
风险等级：	1.48	Base Number Matches：	1

SIHP22N60EF-GE3 数据手册

SiHP22N60EF

Vishay Siliconix

www.vishay.com

Axis Title

10000

1000

100

10000

1000

100

V_DS= 480 V

_DS= 300 V

_DS= 120 V

100

125

150

T_C- Case Temperature (°C)

Q_g- Total Gate Charge (nC)

Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 10 - Maximum Drain Current vs. Case Temperature

Axis Title

100

10000

775

750

725

700

675

650

625

600

10000

T_J= 25 °C

T_J= 150 °C

1000

100

1000

100

I_D= 1 mA

V_GS= 0 V

1.2

V_SD- Source-Drain Voltage (V)

0.1

0.2

0.4

0.6

0.8

1.0

1.4

-60 -40 -20

20 40 60 80 100 120 140 160

T_J- Junction Temperature (°C)

Fig. 8 - Typical Source-Drain Diode Forward Voltage

Fig. 11 - Temperature vs. Drain-to-Source Voltage

Axis Title

Operation in this area

limited by R_DS(on)

100

10000

I_DMlimited

100 µs

1000

Limited by R_DS(on)

1 ms

100

10 ms

0.1

0.01

T_C= 25 °C,

_J= 150 °C,

single pulse

BVDSS limited

100

1000

V_DS- Drain-to-Source Voltage (V)

Fig. 9 - Maximum Safe Operating Area

Note

a. V_GS> minimum V_GSat which R_DS(on)is specified

S19-0120-Rev. A, 04-Feb-2019

Document Number: 92244

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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