Datasheet > SIHP22N60EF-GE3

SIHP22N60EF-GE3

更新时间： 2024-02-05 03:46:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	131K
描述
Power Field-Effect Transistor,

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技术参数
数据手册

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SIHP22N60EF-GE3 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	Factory Lead Time：	19 weeks
风险等级：	1.48	Base Number Matches：	1

SIHP22N60EF-GE3 数据手册

SiHP22N60EF

Vishay Siliconix

www.vishay.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title

10000

1000

100

3.0

2.5

2.0

1.5

1.0

0.5

10000

1000

100

= 11 A

T_J= 25 °C

I_D

15 V

14 V

13 V

12 V

11 V

10 V

9 V

8 V

7 V

V_GS= 10 V

6 V

5 V

-60 -40 -20

20 40 60 80 100 120 140 160

V_DS- Drain-to-Source Voltage (V)

T_J- Junction Temperature (°C)

Fig. 1 - Typical Output Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Axis Title

10000

1000

100

10000

1000

100

100 000

10 000

1000

100

15 V

T_J= 150 °C

14 V

13 V

12 V

7 V

C_iss

11 V

10 V

9 V

6 V

8 V

C_oss

C_rss

5 V

V_GS= 0 V, f = 1 MHz

_iss= C_gs+ C_gd, C_dsshorted

_rss= C_gd

C_oss= C_ds+ C_gd

300 400

V_DS- Drain-to-Source Voltage (V)

0.1

100

200

500

600

V_DS- Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Axis Title

10000

1000

100

10 000

1000

100

T_J= 25 °C

C_oss

E_oss

T_J= 150 °C

V_DS= 28.4 V

100

200

300

400

500

600

V_GS- Gate-to-Source Voltage (V)

V_DS- Drain-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

Fig. 6 - C_ossand E_ossvs. V_DS

S19-0120-Rev. A, 04-Feb-2019

Document Number: 92244

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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