Datasheet > SiHP24N65EF

SiHP24N65EF

更新时间： 2024-11-06 14:56:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	170K
描述
E Series Power MOSFET with Fast Body Diode

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SiHP24N65EF 数据手册

SiHP24N65EF

Vishay Siliconix

www.vishay.com

E Series Power MOSFET with Fast Body Diode

FEATURES

PRODUCT SUMMARY

• Fast body diode MOSFET using E series

technology

V_DS(V) at T_Jmax.

_DS(on)max. () at 25 °C

Q_gmax. (nC)

700

• Reduced t_rr, Q_rr, and I_RRM

• Low figure-of-merit (FOM) R_onx Q_g

• Low input capacitance (C_iss

• Low switching losses due to reduced Q_rr

• Ultra low gate charge (Q_g)

V_GS= 10 V

0.156

122

)

_gs(nC)

_gd(nC)

• Avalanche energy rated (UIS)

Configuration

Single

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TO-220AB

APPLICATIONS

• Telecommunications

- Server and telecom power supplies

• Lighting

- High-intensity discharge (HID)

- Fluorescent ballast lighting

• Consumer and computing

- ATX power supplies

• Industrial

N-Channel MOSFET

- Welding

- Battery chargers

• Renewable energy

- Solar (PV inverters)

• Switch mode power supplies (SMPS)

• Applications using the following topologies

- LCC

- Phase shifted bridge (ZVS)

- 3-level inverter

- AC/DC bridge

ORDERING INFORMATION

Package

TO-220AB

Lead (Pb)-free and halogen-free

SiHP24N65EF-GE3

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

650

V_GS

_C= 25 °C

Continuous drain current (T_J= 150 °C)

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed drain current ^a

I_DM

Linear derating factor

Single pulse avalanche energy ^b

691

W/°C

E_AS

P_D

Maximum power dissipation

250

Operating junction and storage temperature range

Drain-source voltage slope

Reverse diode dV/dt ^d

T_J, T_stg

-55 to +150

°C

T_J= 125 °C

for 10 s

dV/dt

V/ns

°C

Soldering recommendations (peak temperature) ^c

300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature

b. V_DD= 50 V, starting T_J= 25 °C, L = 28.2 mH, R_g= 25 , I_AS= 7 A

c. 1.6 mm from case

d. I_SD I_D, dI/dt = 900 A/μs, starting T_J= 25 °C

S18-0015-Rev. E, 15-Jan-18

Document Number: 91549

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

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