SiHP33N60EF
Vishay Siliconix
www.vishay.com
EF Series Power MOSFET with Fast Body Diode
FEATURES
PRODUCT SUMMARY
• Fast body diode MOSFET using E series
technology
• Reduced trr, Qrr, and IRRM
• Low figure-of-merit (FOM): Ron x Qg
• Low input capacitance (Ciss
• Reduced switching and conduction losses
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS)
VDS (V) at TJ max.
DS(on) max. at 25 °C ()
Qg (Max.) (nC)
650
R
VGS = 10 V
0.098
155
22
)
Q
gs (nC)
gd (nC)
Q
43
Configuration
Single
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
D
TO-220AB
APPLICATIONS
• Telecommunications
- Server and telecom power supplies
• Lighting
G
- High-intensity discharge (HID)
- Light emitting diodes (LEDs)
• Consumer and computing
- ATX power supplies
• Industrial
S
D
S
G
N-Channel MOSFET
- Welding
- Battery chargers
• Renewable energy
- Solar (PV inverters)
• Switch mode power suppliers (SMPS)
• Applications using the following topologies
- LLC
- Phase shifted bridge (ZVS)
- 3-level inverter
- AC/DC bridge
ORDERING INFORMATION
Package
TO-220AB
Lead (Pb)-free and Halogen-free
SiHP33N60EF-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
600
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
30
T
C = 25 °C
33
Continuous Drain Current (TJ = 150 °C)
VGS at 10 V
ID
TC = 100 °C
21
A
Pulsed Drain Current (Typical) a
Linear Derating Factor
Single Pulse Avalanche Energy b
IDM
100
2.2
W/°C
mJ
W
EAS
PD
691
Maximum Power Dissipation
278
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dt d
TJ, Tstg
-55 to +150
70
°C
TJ = 125 °C
for 10 s
dV/dt
V/ns
°C
50
Soldering Recommendations (Peak Temperature) c
300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 7 A.
c. 1.6 mm from case.
d. ISD ID, dI/dt = 900 A/μs, starting TJ = 25 °C.
S17-0295-Rev. C, 27-Feb-17
Document Number: 91592
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000