Datasheet > SiHP33N60EF

SiHP33N60EF

更新时间： 2024-11-20 14:56:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	289K
描述
EF Series Power MOSFET with Fast Body Diode

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SiHP33N60EF 数据手册

SiHP33N60EF

Vishay Siliconix

www.vishay.com

EF Series Power MOSFET with Fast Body Diode

FEATURES

PRODUCT SUMMARY

• Fast body diode MOSFET using E series

technology

• Reduced t_rr, Q_rr, and I_RRM

• Low figure-of-merit (FOM): R_onx Q_g

• Low input capacitance (C_iss

• Reduced switching and conduction losses

• Ultra low gate charge (Q_g)

• Avalanche energy rated (UIS)

V_DS(V) at T_Jmax.

_DS(on)max. at 25 °C ()

Q_g(Max.) (nC)

650

V_GS= 10 V

0.098

155

)

_gs(nC)

_gd(nC)

Configuration

Single

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TO-220AB

APPLICATIONS

• Telecommunications

- Server and telecom power supplies

• Lighting

- High-intensity discharge (HID)

- Light emitting diodes (LEDs)

• Consumer and computing

- ATX power supplies

• Industrial

N-Channel MOSFET

- Welding

- Battery chargers

• Renewable energy

- Solar (PV inverters)

• Switch mode power suppliers (SMPS)

• Applications using the following topologies

- LLC

- Phase shifted bridge (ZVS)

- 3-level inverter

- AC/DC bridge

ORDERING INFORMATION

Package

TO-220AB

Lead (Pb)-free and Halogen-free

SiHP33N60EF-GE3

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

600

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

Continuous Drain Current (T_J= 150 °C)

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed Drain Current (Typical) ^a

Linear Derating Factor

Single Pulse Avalanche Energy ^b

I_DM

100

2.2

W/°C

E_AS

P_D

691

Maximum Power Dissipation

278

Operating Junction and Storage Temperature Range

Drain-Source Voltage Slope

Reverse Diode dV/dt ^d

T_J, T_stg

-55 to +150

°C

T_J= 125 °C

for 10 s

dV/dt

V/ns

°C

Soldering Recommendations (Peak Temperature) ^c

300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V_DD= 50 V, starting T_J= 25 °C, L = 28.2 mH, R_g= 25 , I_AS= 7 A.

c. 1.6 mm from case.

d. I_SD I_D, dI/dt = 900 A/μs, starting T_J= 25 °C.

S17-0295-Rev. C, 27-Feb-17

Document Number: 91592

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

中文翻译

下载PDF

与SiHP33N60EF相关器件

型号	品牌	获取价格	描述	数据表
SiHP35N60E	VISHAY	获取价格	E Series Power MOSFET
SiHP35N60EF	VISHAY	获取价格	EF Series Power MOSFET With Fast Body Diode
SiHP38N60E	VISHAY	获取价格	E Series Power MOSFET
SiHP38N60EF	VISHAY	获取价格	EF Series Power MOSFET With Fast Body Diode
SiHP4N80E	VISHAY	获取价格	E Series Power MOSFET
SIHP5N50D	VISHAY	获取价格	D Series Power MOSFET
SiHP5N80AE	VISHAY	获取价格	E Series Power MOSFET
SiHP690N60E	VISHAY	获取价格	E Series Power MOSFET
SiHP6N40D	VISHAY	获取价格	D Series Power MOSFET
SiHP6N65E	VISHAY	获取价格	E Series Power MOSFET