Datasheet > SIHP22N60EF-GE3

SIHP22N60EF-GE3

更新时间： 2024-02-08 17:36:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	131K
描述
Power Field-Effect Transistor,

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技术参数
数据手册

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SIHP22N60EF-GE3 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	Factory Lead Time：	19 weeks
风险等级：	1.48	Base Number Matches：	1

SIHP22N60EF-GE3 数据手册

SiHP22N60EF

Vishay Siliconix

www.vishay.com

Axis Title

10000

1000

100

Duty cycle = 0.5

0.2

0.1

0.05

0.02

Single pulse

0.01

0.0001

0.001

0.01

0.1

Pulse Time (s)

Fig. 12 - Normalized Transient Thermal Impedance, Junction-to-Case

R_D

V_DS

t_p

V_GS

D.U.T.

V_DD

R_g

V_DS

10 V

Pulse width ≤ 1 μs

Duty factor ≤ 0.1 %

I_AS

Fig. 13 - Switching Time Test Circuit

Fig. 16 - Unclamped Inductive Waveforms

V_DS

Q_g

10 V

90 %

Q_gs

Q_gd

10 %

V_GS

V_G

t_d(on)t_r

t_d(off)t_f

Charge

Fig. 14 - Switching Time Waveforms

Fig. 17 - Basic Gate Charge Waveform

Current regulator

Same type as D.U.T.

V_DS

Vary t_pto obtain

required I_AS

50 kΩ

12 V

0.2 μF

D.U.T.

R_g

0.3 μF

V_DD

V_DS

I_AS

D.U.T.

10 V

t_p

V_GS

0.01 Ω

3 mA

Fig. 15 - Unclamped Inductive Test Circuit

I_G

I_D

Current sampling resistors

Fig. 18 - Gate Charge Test Circuit

Document Number: 92244

S19-0120-Rev. A, 04-Feb-2019

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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