SiHP18N60E
Vishay Siliconix
www.vishay.com
E Series Power MOSFET
FEATURES
• Low figure-of-merit (FOM) Ron x Qg
PRODUCT SUMMARY
VDS (V) at TJ max.
DS(on) typ. at 25 °C (Ω)
Qg max. (nC)
650
• Low input capacitance (Ciss
)
R
VGS = 10 V
0.176
• Reduced switching and conduction losses
• Ultra low gate charge (Qg)
92
10
Q
gs (nC)
gd (nC)
• Avalanche energy rated (UIS)
Q
18
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Configuration
Single
APPLICATIONS
D
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
TO-220AB
G
- High-intensity discharge (HID)
- Fluorescent ballast lighting
• Industrial
S
D
G
S
N-Channel MOSFET
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Renewable energy
- Solar (PV inverters)
ORDERING INFORMATION
Package
TO-220AB
Lead (Pb)-free and Halogen-free
SiHP18N60E-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
600
V
VGS
30
T
C = 25 °C
18
11
Continuous Drain Current (TJ = 150 °C)
VGS at 10 V
ID
TC = 100 °C
A
Pulsed Drain Current a
IDM
45
Linear Derating Factor
Single Pulse Avalanche Energy b
1.4
W/°C
mJ
W
EAS
PD
204
Maximum Power Dissipation
179
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dt d
TJ, Tstg
-55 to +150
70
°C
TJ = 125 °C
for 10 s
dV/dt
V/ns
°C
30
Soldering Recommendations (Peak Temperature) c
300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 3.8 A.
c. 1.6 mm from case.
d. ISD ≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
S15-1037-Rev. A, 04-May-15
Document Number: 91647
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000