Datasheet > SIHFR010-E3

SIHFR010-E3

更新时间： 2024-10-17 12:04:59

品牌	Logo	应用领域
科盛美 - KERSEMI		/
页数	文件大小	规格书
8页	4608K
描述
Power MOSFET

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SIHFR010-E3 数据手册

IRFR010, SiHFR010

Power MOSFET

FEATURES

• Low Drive Current

• Surface Mount

• Fast Switching

• Ease of Paralleling

PRODUCT SUMMARY

V_DS(V)

R_DS(on)()

V_GS= 10 V

0.20

Q_g(Max.) (nC)

2.6

• Excellent Temperature Stability

• Compliant to RoHS Directive 2002/95/EC

_gs(nC)

_gd(nC)

4.8

DESCRIPTION

Configuration

Single

The Power MOSFET technology is the key to Vishay’s

advanced line of Power MOSFET transistors. The efficient

geometry and unique processing of this latest “State of the

Art” design achieves: very low on-state resistance

combined with high transconductance; superior reverse

energy and diode recovery dV/dt capability.

DPAK

(TO-252)

The Power MOSFET transistors also feature all of the well

established advantages of MOSFET’S such as voltage

control, very fast switching, ease of paralleling and

temperature stability of the electrical parameters.

Surface mount packages enhance circuit performance by

reducing stray inductances and capacitance. The DPAK

(TO-252) surface mount package brings the advantages of

Power MOSFET’s to high volume applications where PC

Board surface mounting is desirable. The surface mount

option IRFR9012, SiHFR9012 is provided on 16 mm tape.

The straight lead option IRFU9012, SiHFU9012 of the device

is called the IPAK (TO-251).

N-Channel MOSFET

They are well suited for applications where limited heat

dissipation is required such as, computers and peripherals,

telecommunication equipment, dc-to-dc converters, and a

wide range of consumer products.

ORDERING INFORMATION

Package

DPAK (TO-252)

IRFR010PbF

SiHFR010-E3

IRFR010

Lead (Pb)-free

SnPb

SiHFR010

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

8.2

Continuous Drain Current

V_GSat 10 V

I_D

T_C= 100 °C

5.2

Pulsed Drain Current^a

Avalanche Current^b

I_DM

I_AS

1.5

Linear Derating Factor

0.20

W/°C

Maximum Power Dissipation

T_C= 25 °C

P_D

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

2.0

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^d

°C

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V, starting T_J= 25 °C, L = 100 μH, R_g= 25 .

c. I_SD 8.2 A, dI/dt  130 A/μs, V_DD 40 V, T_J 150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

www.kersemi,com

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