Datasheet > SIHFI734G

SIHFI734G

更新时间： 2024-11-30 06:11:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	874K
描述
Power MOSFET

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SIHFI734G 数据手册

IRFI734G, SiHFI734G

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Isolated Package

450

• High Voltage Isolation = 2.5 kV_RMS(t = 60 s;

f = 60 Hz)

R_DS(on)(Ω)

V_GS= 10 V

1.2

RoHS

• Sink to Lead Creepage Dist. 4.8 mm

• Dynamic dV/dt

• Low Thermal Resistance

• Lead (Pb)-free

COMPLIANT

Q_g(Max.) (nC)

6.6

_gs(nC)

_gd(nC)

Configuration

Single

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

TO-220 FULLPAK

The TO-220 FULLPAK eliminates the need for additional

insulating hardware in commercial-industrial applications.

The molding compound used provides a high isolation

capability and a low thermal resistance between the tab and

external heatsink. This isolation is equivalent to using a 100

micron mica barrier with standard TO-220 product. The

FULLPAK is mounted to a heatsink using a single clip or by

a single screw fixing.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-220 FULLPAK

IRFI734GPbF

Lead (Pb)-free

SiHFI734G-E3

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

450

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

3.4

Continuous Drain Current

V_GSat 10 V

I_D

T_C=100°C

2.1

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.28

100

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

3.4

E_AR

3.5

Maximum Power Dissipation

_C= 25 °C

P_D

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

4.0

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^d

°C

for 10 s

6-32 or M3 screw

lbf · in

N · m

Mounting Torque

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 15 mH, R_G= 25 Ω, I_AS= 3.4 A (see fig. 12).

c. I_SD≤ 4.9 A, dI/dt ≤ 80 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

Document Number: 91154

S-Pending-Rev. A, 16-Jun-08

www.vishay.com

WORK-IN-PROGRESS

12 3 4 5 6 7 8

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