Datasheet > SIHF820STL

SIHF820STL

更新时间： 2024-11-24 04:37:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	174K
描述
TRANSISTOR 2.5 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3, FET General Purpose Power

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SIHF820STL 数据手册

IRF820S, SiHF820S

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Halogen-free According to IEC 61249-2-21

Definition

• Surface Mount

• Available in Tape and Reel

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Fast Switching

• Ease of Paralleling

500

R_DS(on)()

V_GS= 10 V

3.0

Q_g(Max.) (nC)

3.3

_gs(nC)

_gd(nC)

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

Configuration

Single

DESCRIPTION

D²PAK (TO-263)

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The D²PAK (TO-263) is a surface mount power package

capable of accommodating die size up to HEX-4. It provides

the highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

D²PAK (TO-263) is suitable for high current applications

because of its low internal connection resistance and can

dissipate up to 2.0 W in a typical surface mount application.

N-Channel MOSFET

ORDERING INFORMATION

Package

D²PAK (TO-263)

SiHF820S-GE3

IRF820SPbF

D²PAK (TO-263)

SiHF820STRL-GE3^a

IRF820STRLPbF^a

SiHF820STL-E3^a

D²PAK (TO-263)

Lead (Pb)-free and Halogen-free

SiHF820STRR-GE3^a

IRF820STRRPbF^a

SiHF820STR-E3^a

Lead (Pb)-free

SiHF820S-E3

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

500

T_C= 25 °C

_C= 100 °C

2.5

Continuous Drain Current

V_GSat 10 V

I_D

1.6

Pulsed Drain Current^a

I_DM

8.0

Linear Derating Factor

0.40

0.025

210

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Avalanche Current^a

E_AS

I_AR

2.5

Repetitive Avalanche Energy^a

E_AR

5.0

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

T_C= 25 °C

P_D

V/ns

°C

T_A= 25 °C

3.1

dV/dt

3.5

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to + 150

300^d

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 60 mH, R_g= 25 , I_AS= 2.5 A (see fig. 12).

c. I_SD 2.5 A, dI/dt  50 A/μs, V_DD V_DS, T_J 150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91060

S11-1049-Rev. C, 30-May-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与SIHF820STL相关器件

型号	品牌	获取价格	描述	数据表
SIHF820STR	VISHAY	获取价格	TRANSISTOR 2.5 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3, F
SIHF820STRL-GE3	VISHAY	获取价格	TRANSISTOR 2.5 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND R
SIHF820STRR-GE3	VISHAY	获取价格	TRANSISTOR 2.5 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND R
SIHF830	VISHAY	获取价格	Power MOSFET
SIHF830A	KERSEMI	获取价格	Low Gate Charge Qg Results in Simple Drive Requirement
SIHF830A	VISHAY	获取价格	Power MOSFET
SIHF830A-E3	VISHAY	获取价格	Power MOSFET
SIHF830AL	VISHAY	获取价格	Power MOSFET
SIHF830AL-E3	VISHAY	获取价格	Power MOSFET
SIHF830AS	VISHAY	获取价格	Power MOSFET

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