深圳深爱半导体股份有限公司
产品规格书
Shenzhen SI Semiconductors Co., LTD.
Product Specification
N-沟道功率 MOS 管/ N-CHANNEL POWER MOSFET
SIFG110N070
●特点:热阻低 导通电阻低 栅极电荷低,开关速度快 输入阻抗高 符合RoHS规范
●FEATURES:■LOW THERMAL RESISTANCE ■LOW RDS(ON) TO MINIMIZE CONDUCTIVE LOSS ■LOW GATE
CHARGE FOR FAST SWITCHING ■HIGH INPUT RESISTANCE ■RoHS COMPLIANT
●应用:低压高频逆变电路 同步整流 开关应用
●APPLICATION: ■LOW VOLTAGE,HIGH FREQUENCY INVERTERS
■SYNCHRONOUS RECTIFICATION
■SWITCH APPLICATIONS
●最大额定值(TC=25C)
●Absolute Maximum Ratings(Tc=25C)
TO-220/220FP/262/263
VDS=70V
参数
PARAMETER
漏-源电压
符号
SYMBOL
额定值
VALUE
单位
UNIT
RDS(ON)=5.9mΩ
ID=110A
VDS
VGS
70
V
V
Drain-source Voltage
栅-源电压
gate-source Voltage
漏极电流
±20
Continuous Drain Current
TC=25℃
ID
110
A
TO-220/262/263
: 120
TO-220FP : 30
耗散功率
Total Power Dissipation
Ptot
W
最高结温
Junction Temperature
Tj
150
C
C
存储温度
Storage Temperature
TSTG
-55-175
单脉冲雪崩能量
Single Pulse Avalanche Energy
①
EAS
250
mJ
●电特性(Tc=25C)
●Electronic Characteristics(Tc=25C)
参数
PARAMETER
符号
SYMBOL
测试条件
最小值
MIN
典型值
TYP
最大值
MAX
单位
UNIT
TEST CONDITION
VGS=70V, ID=250A
VGS=VDS, ID=250A
VDS =70V,VGS =0V
漏-源击穿电压
Drain-source Breakdown Voltage
BVDSS
VGS(TH)
IDSS
60
2
V
V
栅极开启电压
Gate Threshold Voltage
4
1
漏-源漏电流
Drain-source Leakage Current
A
栅极漏电流
Gate-body Leakage
Current (VDS = 0)
漏-源导通电阻
Static Drain-source On
Resistance
IGSS
VGS =±20V,VDS=0V
±100
7
nA
RDS(ON)
VGS =10V, ID=40A
VDS =10V, ID=3A
5.9
10
mΩ
S
跨导
Forward Transconductance
gFS
●订单信息/ORDERING INFORMATION:
订货编码/ORDERING CODE
包装形式/PACKING
普通塑封料/ Normal Package Material
无卤塑封料/Halogen Free
SIFG110N070TO-220-TU-HF
SIFG110N070TO-220FP-TU-HF
TO-220 条管装/TUBE PACKING
TO-220FP 条管装/TUBE PACKING
SIFG110N070TO-220-TU
SIFG110N070TO-220FP-TU
SIFG110N070TO-262-TU 或
SIFG110N070TO-263-TU
SIFG110N070TO-262-TU-HF 或
SIFG110N070TO-263-TU-HF
TO-262 或 263 条管装/TUBE PACKING
TO-263 编带装/TAPE & REEL PACKING
SIFG110N070TO-263-TR
SIFG110N070TO-263-TR-HF
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Si semiconductors 2019.08