Datasheet > SIF912EDZ

SIF912EDZ

更新时间： 2022-11-24 21:41:50

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	66K
描述
Bi-Directional N-Channel 30-V (D-S) MOSFET

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SIF912EDZ 数据手册

SiF912EDZ

Vishay Siliconix

Bi-Directional N-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFET: 2.5-V Rated

D ESD Protected: 3000 V

APPLICATIONS

V_DS(V)

r_DS(on)(W)

I_D(A)

0.019 @ V = 4.5 V

10.7

10.5

9.9

D Battery Protection Circuitry

D 1-Cell Li-Ion Battery Pack

− LiB/LiP

0.0195 @ V = 4.0 V

0.022 @ V = 3.1 V

0.027 @ V = 2.5 V

9.0

− Lithium-Polymer

PowerPAKr 2 x 5

2.6 kW

Marking Code

MCXYZ

MC: Part # Code

XYZ: Lot Traceability and Date Code

Ordering Information: SiF912EDZ-T1—E3

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

"12

= 25_C

= 85_C

7.4

5.3

10.7

7.7

Continuous Drain Current (T = 150_C)

Pulsed Drain Current (V = 8 V)

Continuous Diode Current (Diode Conduction)

2.9

3.5

1.8

1.3

1.6

= 25_C

= 85_C

Maximum Power Dissipation

0.86

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

Maximum Junction-to-Ambient

thJA

thJC

_C/W

Maximum Junction-to-Case (Drain)

4.5

5.6

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 72952

S-50131—Rev. B, 24-Jan-05

www.vishay.com

12 3 4 5

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