深圳深爱半导体股份有限公司
产品规格书
Shenzhen SI Semiconductors Co., LTD.
Product Specification
N-沟道功率 MOS 管/ N-CHANNEL POWER MOSFET
SIF95N030
●特点:热阻低 导通电阻低 栅极电荷低,开关速度快 输入阻抗高 符合RoHS规范
●FEATURES:■LOW THERMAL RESISTANCE ■LOW RDS(ON) TO MINIMIZE CONDUCTIVE LOSS ■LOW GATE
CHARGE FOR FAST SWITCHING ■HIGH INPUT RESISTANCE ■RoHS COMPLIANT
●应用:低压高频逆变电路 同步整流 开关 快充
●APPLICATION: ■LOW VOLTAGE,HIGH FREQUENCY INVERTERS
■PRIMARY SWITCH ■QUICK CHARGER
■SYNCHRONOUS RECTIFIER
●最大额定值(TC=25C)
●Absolute Maximum Ratings(Tc=25C)
DFN5X6-8L
单位
UNIT
参数
PARAMETER
符号
SYMBOL
额定值
VALUE
VDS=30V
漏-源电压
Drain-source Voltage
VDS
VGS
30
V
V
RDSON=3.6mΩ
ID=95A
栅-源电压
gate-source Voltage
±20
漏极电流
Continuous Drain Current
TC=25℃
ID
95
45
A
耗散功率
Total Power Dissipation
95N030
Ptot
W
最高结温
Junction Temperature
Tj
150
C
C
存储温度
Storage Temperature
TSTG
-55-175
单脉冲雪崩能量
Single Pulse Avalanche Energy
①
EAS
200
mJ
●电特性(Tc=25C)
●Electronic Characteristics(Tc=25C)
参数
PARAMETER
符号
SYMBOL
测试条件
最小值
MIN
典型值
TYP
最大值
MAX
单位
UNIT
TEST CONDITION
VGS=0V, ID=250A
VGS=VDS, ID=250A
漏-源击穿电压
Drain-source Breakdown Voltage
BVDSS
VGS(TH)
IDSS
30
V
V
栅极开启电压
Gate Threshold Voltage
1.0
3.0
10
漏-源漏电流
Drain-source Leakage Current
VDS =30V, VGS =0V
VGS =±20V
A
栅极漏电流
Gate-body Leakage
Current (VDS = 0)
IGSS
±100
nA
VGS =10V, ID=30A
VGS =4.5V, ID=20A
VDS =10V, ID=15A
3.6
7
4.2
8.4
漏-源导通电阻
Static Drain-source On
Resistance
RDS(ON)
mΩ
S
跨导
Forward Transconductance
gFS
11.5
●订单信息/ORDERING INFORMATION:
包装形式/PACKING
订货编码/ORDERING CODE
SIF95N030 DFN5X6-8L-TR-HF
DFN5X6-8L 编带装/TAPE & REEL PACKING
1
Si semiconductors 2019.10