Datasheet > SiE802DF

SiE802DF

更新时间： 2024-09-26 14:54:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	190K
描述
N-Channel 30-V (D-S) MOSFET

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SiE802DF 数据手册

SiE802DF

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

I_D(A)^a

Definition

•

TrenchFET^®Gen II Power MOSFET

Ultra Low Thermal Resistance Using Top-

Exposed PolarPAK^®Package for Double-Sided

Cooling

Silicon Package

V_DS(V)

R_DS(on)(Ω)^e

Q_g(Typ.)

Limit

0.0019 at V = 10 V

202

50 nC

•

Leadframe-Based New Encapsulated Package

- Die Not Exposed

0.0026 at V = 4.5 V

173

- Same Layout Regardless of Die Size

Low Q_gd/Q_gsRatio Helps Prevent Shoot-Through

100 % R_gand UIS Tested

Package Drawing

www.vishay.com/doc?72945

•

PolarPAK

Compliant to RoHS directive 2002/95/EC

APPLICATIONS

•

VRM

DC/DC Conversion: Low-Side

Synchronous Rectification

Top View

Bottom View

Top surface is connected to pins 1, 5, 6, and 10

N-Channel MOSFET

For Related Documents

www.vishay.com/ppg?72985

Ordering Information: SiE802DF-T1-E3 (Lead (Pb)-free)

SiE802DF-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

202 (Silicon Limit)

60^a(Package Limit)

T_C= 25 °C

60^a

Continuous Drain Current (T_J= 150 °C)

I_D

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

42.7^{b, c}

34.2^{b, c}

100

60^a

4.3^{b, c}

125

Pulsed Drain Current

I_DM

I_S

_C= 25 °C

Continuous Source-Drain Diode Current

T_A= 25 °C

L = 0.1 mH

T_C= 25 °C

I_AS

E_AS

Single Pulse Avalanche Current

Avalanche Energy

_C= 70 °C

P_D

Maximum Power Dissipation

5.2^{b, c}

3.3^{b, c}

T_A= 25 °C

T_A= 70 °C

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

T_J, T_stg

- 55 to 150

260

°C

Notes:

a. Package limited is 60 A.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See Solder Profile (www.vishay.com/doc?73257). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not

plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

Document Number: 72985

S09-1337-Rev. E, 13-Jul-09

www.vishay.com

12 3 4 5 6 7...10

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与SiE802DF相关器件

型号	品牌	获取价格	描述	数据表
SIE802DF-T1-E3	VISHAY	获取价格	Trans MOSFET N-CH 30V 42.7A 10-Pin PolarPAK T/R
SIE802DF-T1-GE3	VISHAY	获取价格	Trans MOSFET N-CH 30V 42.7A 10-Pin PolarPAK T/R
SIE804DF-T1-GE3	VISHAY	获取价格	N-CH POLARPAK BWL 150V 38MOHM@10V - Tape and Reel
SIE806DF	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SIE806DF-T1-E3	VISHAY	获取价格	MOSFET N-CH 30V 60A 10-POLARPAK
SIE808DF	VISHAY	获取价格	N-Channel 20-V (D-S) MOSFET
SIE808DF-T1-GE3	VISHAY	获取价格	N-CHANNEL 20-V (D-S) MOSFET - Tape and Reel
SIE810DF	VISHAY	获取价格	N-Channel 20-V (D-S) MOSFET
SIE810DF-T1-E3	VISHAY	获取价格	Trans MOSFET N-CH 20V 45A 10-Pin PolarPAK T/R
SIE810DF-T1-GE3	VISHAY	获取价格	N-CHANNEL 20-V (D-S) MOSFET - Tape and Reel

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