Datasheet > SIC10A065ND_R2_00001

SIC10A065ND_R2_00001

更新时间： 2024-11-25 01:23:07

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
5页	497K
描述
SILICON CARBIDE SCHOTTKY DIODE

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SIC10A065ND_R2_00001 数据手册

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SiC10A065ND

SILICON CARBIDE SCHOTTKY DIODE

650 V

10 A

Voltage

Current

TO-263

Unit: inch(mm)

Features

 Temperature Independent Switching Behavior

 Low Conduction and Switching Loss

 High Surge Current Capability

 Positive Temperature Coefficient on V_F

 Fast Reverse Recovery

Mechanical Data

 Case: Molded plastic, TO-263

 Marking: 10A065ND

Benefits

 High Frequency Operation

 Higher System Efficiency

 Environmental Protection

 Parallel Device Convenience

 Hard Switching & High Reliability

 High Temperature Application

Maximum Ratings

PARAMETER

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

SYMBOL TEST CONDITIONS

VALUE

UNITS

VRRM

VRSM

TJ=25^oC

TC=25^oC

TC=125^oC

TC=150^oC

TC=25^oC

TC=125^oC

650

Maximum DC Blocking Voltage

Continuous Forward Current

IF(AV)

Repetitive Peak Forward Surge Current

(T_P=10mS, Half Sine Wave, D=0.1)

I_FRM

June 13,2016-REV.00

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