Datasheet > SiC32201

SiC32201

更新时间： 2024-11-25 14:54:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	107K
描述
0.45 mΩ, Integrated OR-ing Switch With OR-ing Controller, Lossless Current Sense, and Temperature Report

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SiC32201 数据手册

SiC32201

Vishay Siliconix

www.vishay.com

0.45 mΩ, Integrated OR-ing Switch With OR-ing Controller,

Lossless Current Sense, and Temperature Report

(Datasheet in Brief)

FEATURES

• High efficiency

- Integrated 0.45 mΩ n-channel current sense MOSFET

- Lossless current sense without shunt resistor

• Compact

- Integrated current sensing and reporting circuits

- Integrated OR-ing control and OR-ing FET driver

• Versatile

DESCRIPTION

- Guaranteed precise current reporting, 2 % for ≥ 10 A

Load current. IMON offset is

current

- Can be paralleled for different power ranges

- Device temperature reporting through T_MON. Highest

temperature reported when multiple T_MONpins are

connected together

10 μA at 0.5 A load

The SiC32201 is a highly integrated smart OR-ing solution

featuring an advanced lossless current sensing design.

Compared to conventional designs with shunt resistors,

OR-ing MOSFETs and other discrete and ICs, the SiC32201

reduces the overall solution size and component count while

increasing power density and efficiency.

The SiC32201 integrates a 0.45 mΩ n-channel OR-ing

MOSFET, a MOSFET driver, forward and reverse voltage

detection for OR-ing control and precision current and

temperature sensing. Its internal fast reverse current

protection circuit significantly reduces the reverse current

level during the OR-ing input short fault, improving system

bus voltage stability.

• Protection and alert

- Fast response to reverse condition, 200 ns/typ. OR-ing

FET off time

- Reverse detection indicated pulling COMM1 low

- T_MONpulled high, alert junction temperature is higher

than 120 °C or internal charge pump UVLO

The SiC32201 is optimized for 12 V operation. It operates

over the voltage range of 9 V to 20 V and can be paralleled

to support different power range requirements. The current

through the OR-ing switch is reported at the I_MONpin. The

T_MONpin reflects the highest temperature of the parallel

parts. It also flags overtemperature and insufficient OR-ing

MOSFET gate drive.

APPLICATIONS

• High availability system power

• N+1 redundant power supplies

• Telecom infrastructure

• Server and networking

The SiC32201 is available in the compact,

thermally

enhanced 6 mm x 6 mm PowerPAK^®MLP66-40L package.

APPLICATION CIRCUIT

(Source)

OUT

(Drain)

1 µF

C_IN

C_BOOST

R_SENSE

IMON

C_IMON

1 nF

Boost

C_CP

0.1 µF

SiC32201

C_CN

Vcc

V_REG

TMON

COMM1

COMM2

1 µF

M/S

GND

(Source)

OUT

(Drain)

C_IN

1 µF

C_BOOST

IMON

Boost

C_CP

C_CN

0.1 µF

SiC32201

TMON

Vcc

V_REG

1 µF

COMM1

COMM2

1 µF

M/S

GND

Fig. 1 - Typical Application Circuit

S21-0483-Rev. A, 17-May-2021

Document Number: 77592

For technical questions, contact: powerictechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4

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