Datasheet > SIC10A120T

SIC10A120T

更新时间： 2024-09-25 01:26:07

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
5页	472K
描述
SILICON CARBIDE SCHOTTKY DIODE

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中文翻译

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数据手册

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SIC10A120T 数据手册

SiC10A120T

SILICON CARBIDE SCHOTTKY DIODE

1200 V

10 A

Voltage

Current

TO-220AC

Unit: inch(mm)

Features

 Temperature Independent Switching Behavior

 Low Conduction and Switching Loss

 High Surge Current Capability

 Positive Temperature Coefficient on V_F

 Fast Reverse Recovery

Mechanical Data

 Case: Molded plastic, TO-220AC

 Marking: 10A120T

Benefits

 High Frequency Operation

 Higher System Efficiency

 Environmental Protection

 Parallel Device Convenience

 Hard Switching & High Reliability

 High Temperature Application

Maximum Ratings

PARAMETER

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

SYMBOL TEST CONDITIONS

VALUE

UNITS

VRRM

VRSM

TJ=25^oC

TC=25^oC

TC=125^oC

TC=150^oC

TC=25^oC

TC=125^oC

1200

27.5

Maximum DC Blocking Voltage

Continuous Forward Current

IF(AV)

Repetitive Peak Forward Surge Current

(T_P=10mS, Half Sine Wave, D=0.1)

I_FRM

February 4,2016-REV.00

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