Datasheet > SIC02A120S_L2_00001

SIC02A120S_L2_00001

更新时间： 2024-11-13 01:21:19

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
5页	480K
描述
SILICON CARBIDE SCHOTTKY DIODE

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SIC02A120S_L2_00001 数据手册

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SiC02A120S

SILICON CARBIDE SCHOTTKY DIODE

1200 V

2 A

Voltage

Current

TO-252AA

Unit: inch(mm)

Features

 Temperature Independent Switching Behavior

 Low Conduction and Switching Loss

 High Surge Current Capability

 Positive Temperature Coefficient on V_F

 Fast Reverse Recovery

Mechanical Data

 Case: Molded plastic, TO-252AA

 Marking: 02A120S

Benefits

 High Frequency Operation

 Higher System Efficiency

 Environmental Protection

 Parallel Device Convenience

 Hard Switching & High Reliability

 High Temperature Application

Maximum Ratings

PARAMETER

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

SYMBOL TEST CONDITIONS

VALUE

UNITS

V_RRM

V_RSM

V_R

TJ=25^oC

TC=25^oC

TC=125^oC

TC=165^oC

TC=25^oC

TC=125^oC

1200

Maximum DC Blocking Voltage

Continuous Forward Current

I_F(AV)

Repetitive Peak Forward Surge Current

(T_P=10mS, Half Sine Wave, D=0.1)

I_FRM

June 15,2016-REV.02

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