SIC04C60
4A SiC Schottky Diode
■ Features
■ Outline
• Low Conduction and Switching Loss
• Positive Temperature Coefficient on VF
• Temperature Independent Switching Behavior
• Fast Reverse Recovery
• High Surge Current Capability
• Pb-free lead plating
Case
Case
■ Benefits
• Higher System Efficiency
• Parallel Device Convenience
• High Temperature Application
• High Frequency Operation
• Hard Switching & High Reliability
• Environmental Protection
PIN1
PIN2
PIN1
PIN2
■ Applications
• SMPS
Package TO-220-2L
Inner Circuit
• PFC
• Solar/Wind Renewable Energy
• Power Inverters
• Motor Drives
■ Maximum ratings and electrical characteristics
Parameter
Conditions
Symbol
SIC04C60
UNIT
V
Marking code
SIC04C60
TJ=25OC
TJ=25OC
TJ=25OC
Tc=25OC
600
Peak Repetitive Reverse Voltage
VRRM
VRSM
VR
600
Peak Reverse Surge Voltage
600
DC Blocking Voltage
9
Tc=135OC
Tc=164OC
Tc=25OC,Tp=10ms,Half Sine-Wave
Tc=125OC,Tp=10ms,Half Sine-Wave
Tc=25OC,Tp=10us,Pulse
4.5
Continuous Forward Current
IF
A
A
2
17
15
Non-Repetitive Peak Forward surge current
IFSM
86
Tc=25OC,Tp=10ms,Half Sine-Wave,D=0.1
Tc=125OC,Tp=10ms,Half Sine-Wave,D=0.1
Tc=25OC
16
Repetitive Peak Forward surge current
Power Dissipation
IFRM
A
14
48
PD
W
OC
Tc=125OC
16
175
-55 to 175
TJ
Tstg
Operation Junction and Storage Temperature
OC/W
UNIT
V
Thermal Resistance Junction to Case
Parameter
RƟJC
3.1
TYP.
>650
1.5
1.9
<1
Conditions
IR=100uA,TJ=25OC
IF=2A,TJ=25OC
IF=2A,TJ=175OC
VR=600V,TJ=25OC
VR=600V,TJ=125OC
Symbol
VDC
MIN.
MAX.
DC Blocking Voltage
1.8
2.2
30
Forward Voltage
VF
V
Reverse Current
IR
uA
nC
2
80
IF=2A,dI/dt=300A/us,
7
Total Capacitive Charge
QC
VR=400V,TJ=25OC
VR=1V,TJ=25OC,f=1MHz
VR=200V,TJ=25OC,f=1MHz
VR=400V,TJ=25OC,f=1MHz
85
15
15
Total Capacitive
C
pF
Document ID : DS-21KHT
Revised Date : 2015/09/15
Revision : C
1