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SIC04C60 PDF预览

SIC04C60

更新时间: 2024-09-25 01:25:23
品牌 Logo 应用领域
竹懋 - CITC /
页数 文件大小 规格书
4页 715K
描述
4A SiC Schottky Diode

SIC04C60 数据手册

 浏览型号SIC04C60的Datasheet PDF文件第2页浏览型号SIC04C60的Datasheet PDF文件第3页浏览型号SIC04C60的Datasheet PDF文件第4页 
SIC04C60  
4A SiC Schottky Diode  
Features  
Outline  
Low Conduction and Switching Loss  
Positive Temperature Coefficient on VF  
Temperature Independent Switching Behavior  
Fast Reverse Recovery  
High Surge Current Capability  
Pb-free lead plating  
Case  
Case  
Benefits  
Higher System Efficiency  
Parallel Device Convenience  
High Temperature Application  
High Frequency Operation  
Hard Switching & High Reliability  
Environmental Protection  
PIN1  
PIN2  
PIN1  
PIN2  
Applications  
SMPS  
Package TO-220-2L  
Inner Circuit  
PFC  
Solar/Wind Renewable Energy  
Power Inverters  
Motor Drives  
Maximum ratings and electrical characteristics  
Parameter  
Conditions  
Symbol  
SIC04C60  
UNIT  
V
Marking code  
SIC04C60  
TJ=25OC  
TJ=25OC  
TJ=25OC  
Tc=25OC  
600  
Peak Repetitive Reverse Voltage  
VRRM  
VRSM  
VR  
600  
Peak Reverse Surge Voltage  
600  
DC Blocking Voltage  
9
Tc=135OC  
Tc=164OC  
Tc=25OC,Tp=10ms,Half Sine-Wave  
Tc=125OC,Tp=10ms,Half Sine-Wave  
Tc=25OC,Tp=10us,Pulse  
4.5  
Continuous Forward Current  
IF  
A
A
2
17  
15  
Non-Repetitive Peak Forward surge current  
IFSM  
86  
Tc=25OC,Tp=10ms,Half Sine-Wave,D=0.1  
Tc=125OC,Tp=10ms,Half Sine-Wave,D=0.1  
Tc=25OC  
16  
Repetitive Peak Forward surge current  
Power Dissipation  
IFRM  
A
14  
48  
PD  
W
OC  
Tc=125OC  
16  
175  
-55 to 175  
TJ  
Tstg  
Operation Junction and Storage Temperature  
OC/W  
UNIT  
V
Thermal Resistance Junction to Case  
Parameter  
RƟJC  
3.1  
TYP.  
>650  
1.5  
1.9  
<1  
Conditions  
IR=100uA,TJ=25OC  
IF=2A,TJ=25OC  
IF=2A,TJ=175OC  
VR=600V,TJ=25OC  
VR=600V,TJ=125OC  
Symbol  
VDC  
MIN.  
MAX.  
DC Blocking Voltage  
1.8  
2.2  
30  
Forward Voltage  
VF  
V
Reverse Current  
IR  
uA  
nC  
2
80  
IF=2A,dI/dt=300A/us,  
7
Total Capacitive Charge  
QC  
VR=400V,TJ=25OC  
VR=1V,TJ=25OC,f=1MHz  
VR=200V,TJ=25OC,f=1MHz  
VR=400V,TJ=25OC,f=1MHz  
85  
15  
15  
Total Capacitive  
C
pF  
Document ID : DS-21KHT  
Revised Date : 2015/09/15  
Revision : C  
1

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