Datasheet > SI1046R

SI1046R

更新时间： 2024-11-21 06:11:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	110K
描述
N-Channel 20-V (D-S) MOSFET

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SI1046R 数据手册

New Product

Si1046R

Vishay Siliconix

N-Channel 20-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free Option Available

TrenchFET^®Power MOSFET: 1.8 V Rated

ESD Protected: 2000 V

_D(A)^a

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

0.420 at V_GS= 4.5 V

0.501 at V_GS= 2.5 V

0.660 at V_GS= 1.8 V

0.606

0.505

0.15

RoHS

COMPLIANT

0.92

APPLICATIONS

•

Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories

•

Battery Operated Systems

Power Supply Converter Circuits

Load/Power Switching Cell Phones, Pagers

SC75-3L

Marking Code

Lot Traceability

and Date Code

Part # Code

Top View

Ordering Information: Si1046R-T1-E3 (Lead (Pb)-free)

Si1046R-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

0.606^{b, c}

0.485^{b, c}

2.5

0.21^{b, c}

0.25^{b, c}

0.16^{b, c}

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current (T_J= 150 °C)^a

I_D

I_DM

I_S

Pulsed Drain Current

Continuous Source-Drain Diode Current

T_A= 25 °C

Maximum Power Dissipation^a

P_D

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

Typical

Maximum

530

Unit

t ≤ 5 s

440

540

Maximum Junction-to-Ambient^{b, d}

°C/W

Steady State

650

Notes:

a. Based on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 650 °C/W.

Document Number: 74595

S-81543-Rev. B, 07-Jul-08

www.vishay.com

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