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SHF1101SMS PDF预览

SHF1101SMS

更新时间: 2024-11-09 13:13:27
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SHF1101SMS 数据手册

 浏览型号SHF1101SMS的Datasheet PDF文件第2页 
SHF1100SM  
thru  
SHF1103SM  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
DESIGNER’S DATA SHEET  
Part Number / Ordering Information 1/  
1 AMP  
50–300 Volts  
35 nsec  
SHF11 __ SM __  
L Screening2/ = None  
HYPER FAST RECTIFIER  
L
TX = TX Level  
TXV = TXV Level  
-S = S Level  
Features:  
Hyper Fast Recovery: 35 nsec Max.  
PIV to 300 Volts  
Hermetically Sealed Surface Mount Package  
Package  
L
SM = Surface Mount Round Tab  
Voltage  
Void Free Construction  
00 = 50 V  
For High Efficiency Applications  
Single Chip Construction  
01 = 100 V  
02 = 200 V  
03 = 300 V  
Replaces for UES1104 Types  
TX, TXV, and S-Level Screening Available2/  
Maximum Ratings  
Symbol  
Value  
Units  
Peak Repetitive Reverse and  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
SHF1100SM  
SHF1101SM  
SHF1102SM  
SHF1103SM  
100  
200  
300  
Volts  
Average Rectified Forward Current  
(Resistive Load, 60 Hz, Sine Wave, TA = 25ºC)  
1
Io  
Amps  
Amps  
Surge Current  
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to  
20  
IFSM  
Reach Equilibrium between Pulses, TA = 25ºC)  
-65 to +175  
28  
Operating & Storage Temperature  
Top & Tstg  
RθJE  
ºC  
Maximum Thermal Resistance  
Junction to End Tab  
ºC/W  
Notes:  
SM  
1/ For Ordering Information, Price, Operating Curves, and Availability – Contact Factory.  
2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request.  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RH0115C  
DOC  

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