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SHD375493BSSR PDF预览

SHD375493BSSR

更新时间: 2024-11-08 19:52:11
品牌 Logo 应用领域
SENSITRON 功效瞄准线二极管
页数 文件大小 规格书
2页 103K
描述
Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon,

SHD375493BSSR 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:S-XSSO-G1Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.76
其他特性:LOW POWER LOSS应用:EFFICIENCY
外壳连接:ANODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.5 VJESD-30 代码:S-XSSO-G1
JESD-609代码:e0最大非重复峰值正向电流:150 A
元件数量:1相数:1
端子数量:1最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:UNSPECIFIED
封装形状:SQUARE封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED参考标准:MIL-19500
最大重复峰值反向电压:600 V最大反向电流:50 µA
最大反向恢复时间:0.05 µs表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SHD375493BSSR 数据手册

 浏览型号SHD375493BSSR的Datasheet PDF文件第2页 
SHD375493  
SHD375493B  
SENSITRON  
SEMICONDUCTOR  
TECHNICAL DATA  
DATA SHEET 5021, REV. A  
Replaces SHD3153  
HERMETIC POWER ULTRAFAST RECTIFIER  
DESCRIPTION: A 600 VOLT, 25 AMP, 50 NANOSECOND HERMETIC POWER ULTRAFAST RECTIFIER  
IN A SHD-2 / 2B HIGH PROFILE PACKAGE.  
Features:  
Low Forward Voltage Drop  
Ultrafast Reverse Recovery  
Low Power Loss, High Efficiency  
Very High Surge Capacity  
JANTX (suffix S) and JANS (suffix SS) equivalent screening options  
Add suffix R for Reverse Polarity (SHD375493R / SHD375493BR)  
Maximum Ratings:  
Characteristics  
Peak Inverse Voltage  
Max. Average Forward  
Current  
Symbol  
VRWM  
IF(AV)  
Condition  
IR = 100µA, TC = 250C  
50% duty cycle, rectangular wave  
form, TC = 85 C  
Max.  
600  
25  
Units  
V
A
Max. Peak One Cycle Non-  
Repetitive Surge Current  
Thermal Resistance  
IFSM  
RTH  
8.3 msec, sine pulse  
150  
A
Standard Version  
Reverse Polarity Version  
1.0  
1.2  
C/W  
Max. Junction Temperature  
Max. Storage Temperature  
TJ  
Tstg  
-
-
- 55 to + 150  
- 55 to + 150  
C  
C  
Electrical Characteristics:  
Characteristics  
Symbol  
Condition  
Typ. Max.  
Units  
Max. Forward Voltage Drop  
VF1  
1.03  
1.18  
1.36  
0.78  
0.92  
1.09  
1.18  
1.30  
1.46  
10  
1.16  
1.30  
1.50  
0.95  
1.10  
1.27  
1.35  
1.48  
1.64  
50  
V
@ 5A, Pulse, TJ = 25 C  
@ 10A, Pulse, TJ = 25 C  
@ 20A, Pulse, TJ = 25 C  
@ 5A, Pulse, TJ = 125 C  
@ 10A, Pulse, TJ = 125 C  
@ 20A, Pulse, TJ = 125 C  
@ 5A, Pulse, TJ = -55 C  
@ 10A, Pulse, TJ = -55 C  
@ 20A, Pulse, TJ = -55 C  
@VR = 600V, Pulse, TJ = 25 C  
@VR = 480V, Pulse, TJ = 125 C  
IF = 0.5A; IRM = 1A, IRR = 0.25A  
TJ = 25 C  
VF2  
VF3  
V
V
Max. Reverse Current  
Reverse Recovery Time  
Capacitance  
IR1  
IR2  
TRR  
A  
mA  
ns  
0.05  
43  
1
50  
CJ  
VR = 10V, f = 1MHz  
80  
120  
pF  
©2016 Sensitron Semiconductor 221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681  
PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com sales@sensitron.com  

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