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SHD375589B PDF预览

SHD375589B

更新时间: 2024-11-28 19:46:51
品牌 Logo 应用领域
SENSITRON 功效瞄准线二极管
页数 文件大小 规格书
3页 84K
描述
Rectifier Diode, 1 Phase, 1 Element, 32A, 1200V V(RRM), Silicon,

SHD375589B 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:S-XSSO-G1Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.83其他特性:LOW POWER LOSS
应用:EFFICIENCY外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.55 V
JESD-30 代码:S-XSSO-G1JESD-609代码:e0
最大非重复峰值正向电流:300 A元件数量:1
相数:1端子数量:1
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:32 A封装主体材料:UNSPECIFIED
封装形状:SQUARE封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:1200 V
最大反向电流:50 µA最大反向恢复时间:0.5 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SHD375589B 数据手册

 浏览型号SHD375589B的Datasheet PDF文件第2页浏览型号SHD375589B的Datasheet PDF文件第3页 
SHD375589  
SHD375589B  
SENSITRON  
SEMICONDUCTOR  
TECHNICAL DATA  
DATA SHEET 5365, REV. -  
HERMETIC FAST RECOVERY RECTIFIER  
HIGH VOLTAGE  
Features:  
Low Forward Voltage Drop  
Low Power Loss, High Efficiency  
Very High Surge Capacity  
Very suitable for medium to high frequency applications (upto 40 kHz)  
Soft Reverse Recovery at Low and High Temperature  
Trr guaranteed lower than 0.5sec  
For ceramic seals use part number prefix SHDC  
Different Lead-bend options available  
Electrically / Mechanically Stable during and after Packaging  
Maximum Ratings:  
Characteristics  
Peak Inverse Voltage  
Max. Average Forward  
Current  
Symbol  
VRWM  
IF(AV)  
Condition  
-
50% duty cycle, rectangular wave  
Max.  
1200  
32  
Units  
V
A
form, TC = 65 C  
Max. Peak One Cycle Non-  
Repetitive Surge Current  
Thermal Resistance  
Max. Junction Temperature  
Max. Storage Temperature  
IFSM  
8.3 msec, sine pulse  
300  
A
ZTH  
TJ  
Tstg  
0.85  
- 55 to + 150  
- 55 to + 150  
TC = 25 C  
C / W  
C  
C  
-
-
Electrical Characteristics:  
Characteristics  
Symbol  
Condition  
Typ. Max.  
Units  
Max. Forward Voltage Drop  
VF1  
1.15  
1.40  
-
-
2
1.25  
1.55  
1.18  
1.45  
50  
V
@ 9A, Pulse, TJ = 25 C  
@ 32A, Pulse, TJ = 25 C  
@ 9A, Pulse, TJ = 125 C  
@ 32A, Pulse, TJ = 125 C  
@VR = 1200V, Pulse, TJ = 25 C  
@VR = 1200V, Pulse, TJ = 125 C  
IF = 0.5A; IRM = 1A, IRR = 0.25A  
TJ = 25 C  
VF2  
V
Max. Reverse Current  
IR1  
IR2  
TRR  
A  
A  
s  
-
500  
0.5  
Reverse Recovery Time  
Capacitance  
0.3  
CJ  
VR = 5V, f = 1MHz, VSIG = 1V  
-
150  
pF  
©2013 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681  
Phone (631) 586 7600 Fax (631) 242 9798 www.sensitron.com sales@sensitron.com  

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