SHD126246
SHD126246D
SHD126246N
SHD126246P
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4782, REV. A
SILICON SCHOTTKY RECTIFIER
Ultra Low Reverse Leakage
200C Operating Temperature
Applications:
Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode
Features:
Ultra low Reverse Leakage Current
Soft Reverse Recovery at Low and High Temperature
Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward
Current
Max. Average Forward
Current
Symbol
VRWM
IF(AV)
Condition
-
Max.
200
15
Units
V
A
50% duty cycle, rectangular
wave form (Single/Doubler)
50% duty cycle, rectangular
wave form (Common
Cathode/Common Anode)
8.3 ms, half Sine wave
IF(AV)
15
75
A
A
Max. Peak One Cycle Non-
Repetitive Surge Current
Max. Junction Temperature
Max. Storage Temperature
Thermal Resistance(single)
Thermal Resistance(Common
Cathode,Common, Anode
Doubler)
IFSM
TJ
Tstg
-
-
-
-
-65 to +200
-65 to +200
0.72
C
C
C/W
C/W
R
JC
1.45
R
JC
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
Symbol
VF1
Condition
Max.
1.01
0.85
0.35
Units
V
V
@ 15A, Pulse, TJ = 25 C
@ 15A, Pulse, TJ = 125 C
@VR = 200V, Pulse,
TJ = 25 C
VF2
IR1
Max. Reverse Current
mA
IR2
CT
@VR = 200V, Pulse,
TJ = 125 C
@VR = 5V, TC = 25 C
fSIG = 1MHz,
8.0
mA
pF
Max. Junction Capacitance
300
VSIG = 50mV (p-p)
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