Datasheet > SHD1262H6P

SHD1262H6P

更新时间： 2024-09-24 18:04:51

品牌	Logo	应用领域
SENSITRON		/
页数	文件大小	规格书
4页	163K
描述
Description: A 200 Volt, =15 AMP, SCHOTTKY DIODE

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中文翻译

获取价格

数据手册

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SHD1262H6P 数据手册

SHD1262H6

SHD1262H6D

SHD1262H6N

SHD1262H6P

SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 6081, REV. B

SILICON SCHOTTKY RECTIFIER

Low Reverse Leakage

175C Operating Temperature

Applications:

• Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode

Features:

•

Low Reverse Leakage Current

Soft Reverse Recovery at Low and High Temperature

Low Forward Voltage Drop

Low Power Loss, High Efficiency

High Surge Capacity

•

Guard Ring for Enhanced Durability and Long-Term Reliability

Guaranteed Reverse Avalanche Characteristics

Maximum Ratings:

Characteristics

Peak Inverse Voltage

Max. Average Forward

Current

Max. Average Forward

Current

Symbol

V_RWM

I_F(AV)

Condition

Max.

200

Units

50% duty cycle, rectangular

wave form (Single/Doubler)

50% duty cycle, rectangular

wave form (Common

Cathode/Common Anode)

8.3 ms, half Sine wave

I_F(AV)

Max. Peak One Cycle Non-

Repetitive Surge Current

Max. Junction Temperature

Max. Storage Temperature

Thermal Resistance(per leg)

I_FSM

T_J

T_stg

R_JC

-65 to +175

2.82

C

C/W

Electrical Characteristics:

Characteristics

Max. Forward Voltage Drop

Symbol

V_F1

Condition

@ 15A, Pulse, T_J= 25 C

@ 15A, Pulse, T_J= 125 C

@V_R= 200V, Pulse,

T_J= 25 C

Max.

1.01

0.9

Units

V_F2

I_R1

Max. Reverse Current

0.2

I_R2

C_T

@V_R= 200V, Pulse,

T_J= 125 C

@V_R= 5V, T_C= 25 C

f_SIG= 1MHz,

2.0

Max. Junction Capacitance

330

V_SIG= 50mV (p-p)

12 3 4

中文翻译

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