SHD114536
SHD114536A
SHD114536B
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4520, REV. A
POWER SCHOTTKY RECTIFIER
Low Reverse Leakage
Applications:
• Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode
Features:
•
Ultra Low Reverse Leakage Current
•
•
•
•
•
•
Soft Reverse Recovery at Low and High Temperature
Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Maximum Ratings:
Characteristics
Symbol
VRWM
IF(AV)
Condition
-
50% duty cycle, rectangular
wave form
Max.
200
60
Units
V
A
Peak Inverse Voltage
Max. Average Forward
Current
Max. Peak One Cycle Non-
Repetitive Surge Current
Non-Repetitive Avalanche
Energy
Repetitive Avalanche
Current
IFSM
EAS
IAR
8.3 ms, half Sine wave
(per leg)
TJ = 25 °C, IAS = 1.3 A,
L = 40mH (per leg)
860
27
A
mJ
A
1.3
IAS decay linearly to 0 in 1 µs
ƒ limited by TJ max VA=1.5VR
Thermal Resistance
Max. Junction Temperature
Max. Storage Temperature
RthJC
TJ
Tstg
Per Package
0.35
-65 to +200
-65 to +200
°C/W
°C
°C
-
-
Electrical Characteristics:
Characteristics
Symbol
Condition
Max.
Units
Max. Forward Voltage Drop
VF1
0.95
V
@ 60A, Pulse, TJ = 25 °C
(per leg) measured at the leads
VF2
IR1
IR2
CT
0.79
0.3
V
@ 60A, Pulse, TJ = 125 °C
(per leg) measured at the leads
@VR = 200V, Pulse,
TJ = 25 °C (per leg)
@VR = 200V, Pulse,
Max. Reverse Current
mA
mA
pF
3.0
TJ = 125 °C (per leg)
Max. Junction Capacitance
900
@VR = 5 V, TC = 25 °C
fSIG = 1 MHz,
VSIG = 50mV (p-p) (per leg)
Due to the nature of the 200V Schottky devices, some degradation in trr performance at high temperatures should
be expected, unlike conventional lower voltage Schottkys.
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