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SHD114546_08 PDF预览

SHD114546_08

更新时间: 2024-11-18 09:26:55
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3页 40K
描述
HERMETIC POWER SCHOTTKY RECTIFIER 200°C Maximum Operation Temperature

SHD114546_08 数据手册

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SHD114546  
SHD114546A  
SHD114546B  
SENSITRON  
SEMICONDUCTOR  
TECHNICAL DATA  
DATASHEET 1049, REV. A  
HERMETIC POWER SCHOTTKY RECTIFIER  
200°C Maximum Operation Temperature  
Very Low Forward Voltage Drop  
Applications:  
Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode  
Features:  
Soft Reverse Recovery at Low and High Temperature  
Very Low Forward Voltage Drop  
Low Reverse Leakage Current  
Low Power Loss, High Efficiency  
High Surge Capacity  
Guard Ring for Enhanced Durability and Long Term Reliability  
Guaranteed Reverse Avalanche Characteristics  
MAXIMUM RATINGS  
RATING  
ALL RATINGS ARE @ TC = 25 °C UNLESS OTHERWISE SPECIFIED.  
SYMBOL MAX. UNITS  
PEAK INVERSE VOLTAGE  
PIV  
IO  
200  
60  
Volts  
Amps  
Amps  
MAXIMUM DC OUTPUT CURRENT (With Cathode Maintained @ TC=100 OC)  
MAXIMUM NONREPETITIVE FORWARD SURGE CURRENT  
(t=8.3ms, Sine)  
IFSM  
860  
MAXIMUM THERMAL RESISTANCE (Junction to Mounting Surface, Cathode)  
MAXIMUM JUNCTION TEMPERATURE RANGE  
0.70  
RθJC  
°C/W  
°C  
Top/Tstg  
-65 to  
+ 200  
MAXIMUM STORAGE TEMPERATURE RANGE  
Top/Tstg  
-65 to  
+ 175  
°C  
ELECTRICAL CHARACTERISTICS  
CHARACTERISTIC  
SYMBOL MAX. UNITS  
MAXIMUM FORWARD VOLTAGE DROP, Pulsed (If = 60 Amps)  
0.95  
0.79  
Volts  
TJ = 25 °C  
TJ = 125 °C  
Vf  
MAXIMUM REVERSE CURRENT (Ir @ 200V PIV)  
Ir  
1.1  
24  
mA  
pF  
TJ = 25 °C  
TJ = 125 °C  
MAXIMUM JUNCTION CAPACITANCE  
(Vr =5V)  
CT  
900  
*Due to the nature of the 200V Schottky devices, some degradation in trr performance at high temperatures should  
be expected, unlike conventional lower voltage Schottkys.  
©2001 Sensitron Semiconductor 221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681  
PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com sales@sensitron.com  

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