SHD114546
SHD114546A
SHD114546B
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATASHEET 1049, REV. A
HERMETIC POWER SCHOTTKY RECTIFIER
200°C Maximum Operation Temperature
Very Low Forward Voltage Drop
Applications:
• Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode
Features:
•
Soft Reverse Recovery at Low and High Temperature
Very Low Forward Voltage Drop
Low Reverse Leakage Current
Low Power Loss, High Efficiency
High Surge Capacity
•
•
•
•
•
•
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
MAXIMUM RATINGS
RATING
ALL RATINGS ARE @ TC = 25 °C UNLESS OTHERWISE SPECIFIED.
SYMBOL MAX. UNITS
PEAK INVERSE VOLTAGE
PIV
IO
200
60
Volts
Amps
Amps
MAXIMUM DC OUTPUT CURRENT (With Cathode Maintained @ TC=100 OC)
MAXIMUM NONREPETITIVE FORWARD SURGE CURRENT
(t=8.3ms, Sine)
IFSM
860
MAXIMUM THERMAL RESISTANCE (Junction to Mounting Surface, Cathode)
MAXIMUM JUNCTION TEMPERATURE RANGE
0.70
RθJC
°C/W
°C
Top/Tstg
-65 to
+ 200
MAXIMUM STORAGE TEMPERATURE RANGE
Top/Tstg
-65 to
+ 175
°C
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
SYMBOL MAX. UNITS
MAXIMUM FORWARD VOLTAGE DROP, Pulsed (If = 60 Amps)
0.95
0.79
Volts
TJ = 25 °C
TJ = 125 °C
Vf
MAXIMUM REVERSE CURRENT (Ir @ 200V PIV)
Ir
1.1
24
mA
pF
TJ = 25 °C
TJ = 125 °C
MAXIMUM JUNCTION CAPACITANCE
(Vr =5V)
CT
900
*Due to the nature of the 200V Schottky devices, some degradation in trr performance at high temperatures should
be expected, unlike conventional lower voltage Schottkys.
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