Datasheet > SH8J65

SH8J65

更新时间： 2024-11-21 06:11:31

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
6页	228K
描述
4V Drive Pch+Pch MOSFET

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中文翻译

获取价格

数据手册

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SH8J65 数据手册

4V Drive Pch+Pch MOSFET

SH8J65

Structure

Dimensions (Unit : mm)

Silicon P-channel MOSFET

SOP8

Features

1) Low On-resistance.

2) Built-in G-S Protection Diode.

3) Small Surface Mount Package (SOP8).

Application

Switching

Each lead has same dimensions

Packaging specifications

Inner circuit

(8)

(7)

(6)

(5)

Package

Taping

Type

Code

Basic ordering unit (pieces)

2500

SH8J65

∗2

(1) Tr1 Source

(2) Tr1 Gate

(3) Tr2 Source

(4) Tr2 Gate

(5) Tr2 Drain

(6) Tr2 Drain

(7) Tr1 Drain

(8) Tr1 Drain

Absolute maximum ratings (Ta=25C)

∗1

(1)

(2)

(3)

(4)

Parameter

Drain-source voltage

Symbol

Limits

−30

Unit

V_DSS

V_GSS

I_D

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

Gate-source voltage

Continuous

Pulsed

7.0

Drain current

∗1

I_DP

Continuous

Pulsed

I_S

−1.6

−28

2.0

Source current

(Body diode)

∗1

∗2

I_SP

W / TOTAL

W / ELEMENT

°C

Total power dissipation

P_D

1.4

Channel temperature

Tch

150

Range of Storage temperature

∗1 Pw≤10μs, Duty cycle≤1%

∗2 Mounted on a ceramic board

Tstg

−55 to +150

°C

www.rohm.com

2009.12 - Rev.A

1/5

12 3 4 5 6

中文翻译

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