SSR40C100S1
SSR40C120S1
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
40 A / 1200 V
Schottky Silicon Carbide
Rectifier
Designer’s Data Sheet
Part Number / Ordering Information 1/
SSR40C __
__ __
Screening 2/ __ = Not Screened
TX = TX Level
FEATURES:
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1200 Volt Silicon Carbide Schottky Rectifier
Average Output Current 40 Amps
No Reverse Recovery
No Forward Recovery
No Switching Time Change Over
Temperature
TXV = TXV
S = S Level
Package
S1 = SMD1
Voltage 100 = 1000 V
120 = 1200 V
Small Package Size
TX, TXV, and Space Level Screening
Available. 2/ Consult Factory.
MAXIMUM RATINGS 3/
Symbol
Value
Units
Volts
SSR30C100S1
SSR30C120S1
VRRM
VR
1000
1200
Peak Repetitive and Peak Reverse Voltage
Average Rectified Forward Current 4/
Total
IO
40
Amps
(Resistive Load, 60 Hz, Sine Wave)
Peak Surge Current 4/
IFSM
200
Amps
(8.3 ms Pulse, Half Sine Wave, TA = 25oC)
Total
Operating & Storage Temperature
TOP & Tstg
TJ
-55 to +250
-55 to +250
oC
oC
Junction Temperature
Maximum Thermal Resistance 4/
(Junction to Case)
RθJC
0.6
oC/W
Total
NOTES:
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC
4/ Terminal Pads 1 & 3 Must be connected together for testing and at the Board Level.
SMD1
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: SH0043D
DOC