Datasheet > SH0049C_15

SH0049C_15

更新时间： 2024-11-09 01:18:15

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描述
Schottky Silicon Carbide Centertap Rectifier

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数据手册

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SH0049C_15 数据手册

SSR20C120CTS1

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

20 A / 1200 V

Schottky Silicon Carbide

Centertap Rectifier

Designer’s Data Sheet

Part Number / Ordering Information ^1/

SSR20C __ __ __ __

Screening ^2/

└

__ = Not Screened

TX = TX Level

TXV = TXV

│

└

│

└

│

└

FEATURES:



1200 Volt Silicon Carbide Schottky Rectifier

Average Output Current 20 Amps

No Reverse Recovery

No Forward Recovery

No Switching Time Change Over

Temperature

S = S Level

Package

S1 = SMD1

Configuration CT = Centertap

Voltage



Small Package Size

SMD1: 5.3 gr (typ)

TX, TXV, and Space Level Screening

Available. Consult Factory.

080 = 800 V

100 = 1000 V

120 = 1200 V

MAXIMUM RATINGS^3/

Symbol

Value

Units

SSR20C080CT

SSR20C100CT

SSR20C120CT

800

1000

1200

V_RRM

V_R

Peak Repetitive and Peak Reverse Voltage

Volts

Average Rectified Forward Current

(Resistive Load, 60 Hz, Sine Wave)

Per Leg

Total

I_O

Amps

Peak Surge Current

I_FSM

(8.3 ms Pulse, Half Sine Wave, T_A= 25^oC, per leg)

Operating & Storage Temperature

Junction Temperature

T_OP& T_stg

T_J

-55 to +250

^oC

Maximum Thermal Resistance

(Junction to Case)

1.0

^oC/W

R_JC

NOTES:

SMD1 (S)

*Pulse Test: Pulse Width = 300 sec, Duty Cycle = 2%

1/ For ordering information, price, and availability - contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request.

3/ Unless otherwise specified, all electrical characteristics @25ºC

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: SH0049C

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