Ordering number : ENN7926
SGF35
N-Channel GaAs MESFET
For C to Ku-Band Local Oscillator and
Amplifier
SGF35
Features
• Lower Phase Noise.
• Highly reliable protection film.
•
Automatic surface mounting supported.
•
MCPH4 package.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Symbol
Conditions
Ratings
Unit
V
V
6
-- 5
DS
GS
Gate-to-Source Voltage
Drain Current
V
V
I
100
mA
D
Mounted on copper foil (area : 0.96mm2)
Allowable Power Dissipation
P
400
150
mW
D
Glass epoxy board (145✕80✕1.6mm)
Junction Temperature
Storage Temperature
Tj
°C
°C
Tstg
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
--10
Gate-to-Source Leakage Current
Saturated Drain Current
Cutoff Voltage
I
V
GS
V
DS
V
DS
V
DS
=--5V
µA
mA
V
GSO
I
=3V, V =0
GS
30
--0.5
50
70
DSS
(off)
V
=3V, I =100µA
--1.6
34
--2.7
GS
yfs
D
Forward Transfer Admittance
=3V, I =10mA
mS
D
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Sem iconductor Com pany
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
33004SG TS IM TA-101124 No.7926-1/5