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SGF80N60UF PDF预览

SGF80N60UF

更新时间: 2024-02-29 21:41:56
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 双极性晶体管
页数 文件大小 规格书
7页 570K
描述
Ultra-Fast IGBT

SGF80N60UF 技术参数

是否无铅: 不含铅生命周期:Not Recommended
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.22其他特性:LOW CONDUCTION LOSS, HIGH SPEED SWITCHING
外壳连接:ISOLATED最大集电极电流 (IC):80 A
集电极-发射极最大电压:600 V配置:SINGLE
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:MOTOR CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):310 ns标称接通时间 (ton):85 ns
Base Number Matches:1

SGF80N60UF 数据手册

 浏览型号SGF80N60UF的Datasheet PDF文件第2页浏览型号SGF80N60UF的Datasheet PDF文件第3页浏览型号SGF80N60UF的Datasheet PDF文件第4页浏览型号SGF80N60UF的Datasheet PDF文件第5页浏览型号SGF80N60UF的Datasheet PDF文件第6页浏览型号SGF80N60UF的Datasheet PDF文件第7页 
October 2001  
IGBT  
SGF80N60UF  
Ultra-Fast IGBT  
General Description  
Features  
Fairchild's Insulated Gate Bipolar Transistor(IGBT) UF  
series provides low conduction and switching losses.  
UF series is designed for the applications such as motor  
control and general inverters where High Speed Switching  
is required.  
High Speed Switching  
Low Saturation Voltage : V  
High Input Impedance  
= 2.1 V @ I = 40A  
CE(sat)  
C
Application  
AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls  
C
E
G
TO-3PF  
G
C
E
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Description  
SGF80N60UF  
Units  
V
V
V
Collector-Emitter Voltage  
600  
± 20  
CES  
GES  
Gate-Emitter Voltage  
V
Collector Current  
@ T  
=
25°C  
80  
A
C
I
I
C
Collector Current  
@ T = 100°C  
40  
A
C
Pulsed Collector Current  
220  
A
CM (1)  
P
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction Temperature  
Storage Temperature Range  
Maximum Lead Temp. for Soldering  
Purposes, 1/8” from Case for 5 Seconds  
@ T  
=
25°C  
110  
W
W
°C  
°C  
D
C
@ T = 100°C  
45  
C
T
-55 to +150  
-55 to +150  
J
T
stg  
T
300  
°C  
L
Notes :  
(1) Repetitive rating : Pulse width limited by max. junction temperature  
Thermal Characteristics  
Symbol  
Parameter  
Typ.  
--  
Max.  
Units  
°C/W  
°C/W  
R
R
Thermal Resistance, Junction-to-Case  
1.1  
40  
θJC  
θJA  
Thermal Resistance, Junction-to-Ambient  
--  
©2001 Fairchild Semiconductor Corporation  
SGF80N60UF Rev. A  

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