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SGC-6386Z

更新时间: 2024-11-13 06:11:31
品牌 Logo 应用领域
SIRENZA 射频微波
页数 文件大小 规格书
6页 297K
描述
50-4000 MHz Silicon Germanium Cascadable Gain Block

SGC-6386Z 数据手册

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Preliminary Information  
RoHS Compliant  
& Green Package  
Pb  
SGC-6386Z  
Product Description  
Sirenza Microdevices’ SGC-6386Z is a high performance SiGe HBT MMIC  
amplifier utilizing a Darlington configuration with an active bias network. The  
active bias network provides stable current over temperature and process  
Beta variations. Designed to run directly from a 5V supply, the SGC-6386Z  
does not require a drop resistor as compared to typical Darlington amplifiers.  
The SGC-6386Z product is designed for high linearity 5V gain block  
applications that require small size and minimal external components. It is  
internally matched to 50 ohms.  
50-4000 MHz Silicon Germanium  
Cascadable Gain Block  
The matte tin finish on Sirenza’s lead-free “Z” package is applied using a  
post annealing process to mitigate tin whisker formation and is RoHS  
compliant per EU Directive 2002/95. The package body is manufactured  
with green molding compounds that contain no antimony trioxide or  
halogenated fire retardants.  
Product Features  
Single Fixed 5V Supply  
Supply Drop Resistor not required  
Patented Self Bias Circuitry  
P1dB = 18.3 dBm at 1950 MHz  
IP3 = 34.3 dBm at 1950 MHz  
Robust 1000V ESD, Class 1C HBM  
Gain & Return Loss vs. Frequency  
VD = 5V, ID = 80mA(Typ.)  
20  
15  
10  
5
0
Gain  
IRL  
ORL  
-10  
-20  
-30  
-40  
Applications  
PA Driver Amplifier  
Cellular, PCS, GSM, UMTS  
IF Amplifier  
* No external components and wide band bias tee  
ZS = ZL = 50 ohms, Tlead=25C  
0
0
1
2
3
4
Wireless Data, Satellite  
Frequency (GHz)  
Typical performance with appropriate application circuit  
Symbol  
Parameters  
Small Signal Gain  
Units  
Frequency  
Min.  
Typ.  
Max.  
850 MHz  
1950 MHz  
850 MHz  
1950 MHz  
850 MHz  
1950 MHz  
16.3  
11.9  
19.3  
18.3  
35.6  
34.3  
G
dB  
P1dB  
Output Power at 1dB Compression  
Output Third Order Intercept Point  
dBm  
dBm  
OIP3  
IRL  
ORL  
NF  
Input Return Loss  
dB  
dB  
1950 MHz  
1950 MHz  
1930 MHz  
18.0  
17.0  
4.2  
Output Return Loss  
Noise Figure  
dB  
VD  
Device Operating Voltage  
Device Operating Current  
Thermal Resistance (junction to lead)  
V
5.0  
ID  
mA  
°C/W  
80  
Rth, j-l  
106  
Test Conditions:  
VD = 5.0V  
ID = 80mA Typ.  
OIP3 Tone Spacing = 1MHz  
Pout per tone = 0 dBm  
TL = 25°C  
ZS = ZL = 50 Ohms  
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this  
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or  
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights  
reserved.  
303 S. Technology Ct.  
Broomfield, CO 80021  
Phone: (800) SMI-MMIC  
1
http://www.sirenza.com  
EDS-104746 Rev A  

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