Datasheet > SGC-6489Z-EVB1

SGC-6489Z-EVB1

更新时间： 2022-02-26 13:01:43

品牌	Logo	应用领域
威讯 - RFMD		/
页数	文件大小	规格书
6页	391K
描述
50MHz to 3500MHz SILICON GERMANIUM ACTIVE BIAS GAIN BLOCK

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SGC-6489Z-EVB1 数据手册

SGC-6489Z

50MHz to

3500MHz Sili-

con Germa-

nium Active

Bias Gain

SGC-6489Z

Block

50MHz to 3500MHz SILICON GERMANIUM

ACTIVE BIAS GAIN BLOCK

NOT FOR NEW DESIGNS

Package: SOT-89

Product Description

Features

RFMD’s SGC-6489Z is a high performance SiGe HBT MMIC amplifier utiliz-

ing a Darlington configuration with an active bias network. The active bias

network provides stable current over temperature and process Beta varia-

tions. Designed to run directly from a 5V supply, the SGC-6489Z does not

require a dropping resistor as compared to traditional Darlington amplifi-

ers. The SGC-6489Z product is designed for high linearity 5V gain block

applications that require small size and minimal external components. It is

internally matched to 50.



Single Supply Operation: 5V

at I = 85mA



No Dropping Resistor

Required



Patented Self Bias Circuitry

Gain = 19.5dBm at 1950MHz

P1dB = 19.2dBm at

1950MHz

Optimum Technology

Gain and Return Loss

Matching® Applied

_D= 5V, I_D= 85mA

GaAs HBT

GaAs MESFET

InGaP HBT

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

30.0

20.0

10.0

0.0



IP3 = 32.8dBm at 1950MHz

Robust 1000V ESD, Class 1C

HBM

S21

Bias Tee Data, Z_S= Z_L= 50  , T_L

Applications



S22

-10.0

-20.0

-30.0

-40.0



PA Driver Amplifier

Cellular, PCS, GSM, UMTS

IF Amplifier

S11

Si BJT

GaN HEMT

InP HBT

Wireless Data, Satellite

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

RF MEMS

LDMOS

Frequency (GHz)

Specification

Parameter

Unit

Condition

Min.

20.7

18.0

Typ.

22.2

19.5

18.3

20.6

19.2

18.4

34.1

32.8

31.4

Max.

23.7

21.0

Small Signal Gain

dBm

850MHz

1950MHz

2400MHz

850MHz

1950MHz

2400MHz

850MHz

1950MHz

2400MHz

1950MHz

1930MHz

Output Power at 1dB Compression

Output Third Order Intercept Point

17.7

30.8

Input Return Loss

Output Return Loss

Noise Figure

Device Operating Voltage

Device Operating Current

Thermal Resistance

2.4

3.4

°C/W

junction to lead

Test Conditions: V = 5.0V, I = 82mA, T = 25°C, OIP3 Tone Spacing = 1MHz, Bias Tee Data, Z = Z = 50, P per tone = 0dBm

OUT

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS120409

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