Datasheet > SG6612WN (新产品)

SG6612WN (新产品)

更新时间： 2024-10-29 11:11:51

品牌	Logo	应用领域
罗姆 - ROHM		调节器
页数	文件大小	规格书
5页	1698K
描述
应用：通用逆变器、UPS、功率调节器、Welding 关于裸芯片的规格和销售事宜，请咨询ROHM销售部门，目前尚未开始网售。

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数据手册

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SG6612WN (新产品) 数据手册

SG6612WN

650V 50A Insulated Gate Bipolar Transistor

Datasheet

lOutline

Wafer (W05)

Unsawn on foil (U03)

V_CES

I_{C (Nominal)}

650V

50A

V_{CE(sat) (Typ.)}

1.65V

1272pcs

Notch side

Max. Possible Chips per Wafer

lFeatures

lInner Circuit

1) Trench Light Punch Through Type

2) Low Collector - Emitter Saturation Voltage

3) Low Switching Loss

(2)

(1) Gate

(2) Collector

(3) Emitter

(1)

4) Short Circuit Withstand Time 5μs

(3)

lApplication

General Inverter

UPS

Power Conditioner

Welding

lAbsolute Maximum Ratings

Parameter

Symbol

Value

650

Unit

Collector - Emitter Voltage, T_j= 25°C

Gate - Emitter Voltage

V_CES

V_GES

±30

*1)

Collector Current

I_C

Pulsed Collector Current

150

I_CP

T_j

Operating Junction Temperature

*1 Depending on thermal properties of assembly

*2 Pulse width limited by T_jmax.

-40 to +175

°C

www.rohm.com

2022.06 - Rev.A

1/3

12 3 4 5

中文翻译

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