Datasheet > SG6610WN (新产品)

SG6610WN (新产品)

更新时间： 2024-10-29 11:08:23

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
5页	1711K
描述
Application: General Inverter, UPS, Power Conditioner, WeldingFor sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.

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SG6610WN (新产品) 数据手册

SG6610WN

Datasheet

650V 20A Insulated Gate Bipolar Transistor

lOutline

Wafer (W05)

Unsawn on foil (U03)

V_CES

I_{C (Nominal)}

650V

20A

V_{CE(sat) (Typ.)}

1.65V

2648pcs

Notch side

Max. Possible Chips per Wafer

lFeatures

lInner Circuit

1) Trench Light Punch Through Type

2) Low Collector - Emitter Saturation Voltage

3) Low Switching Loss

(2)

(3)

(1) Gate

(2) Collector

(3) Emitter

(1)

4) Short Circuit Withstand Time 5μs

lApplication

General Inverter

UPS

Power Conditioner

Welding

lAbsolute Maximum Ratings

Parameter

Symbol

Value

650

Unit

Collector - Emitter Voltage, T_j= 25°C

Gate - Emitter Voltage

V_CES

V_GES

±30

*1)

Collector Current

I_C

Pulsed Collector Current

I_CP

T_j

Operating Junction Temperature

*1 Depending on thermal properties of assembly

*2 Pulse width limited by T_jmax.

-40 to +175

°C

www.rohm.com

2022.10 - Rev.A

1/3

12 3 4 5

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