Datasheet > SG12N06P

SG12N06P

更新时间： 2022-04-06 15:34:06

品牌	Logo	应用领域
SIRECTIFIER		晶体双极型晶体管双极性晶体管栅
页数	文件大小	规格书
2页	198K
描述
绝缘栅双极型晶体管（IGBT）Isolated Gate Bipolar Transistor (IGBTs),IGBT分立器件Discrete IGBTs。

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SG12N06P 数据手册

SG12N06P, SG12N06DP

Discrete IGBTs

=25^o

C, unless otherwise specified)

Characteristic Values

Symbol

Test Conditions

Unit

min.

typ.

max.

gts

C=IC90; VCE=10V

Pulse test, t 300us, duty cycle 2%

ies

860

100

oes

CE=25V; VGE=0V; f=1MHz

res

C=IC90; VGE=15V; VCE=0.5VCES

d(on)

d(off)

off

d(on)

Inductive load, T

=IC90; VGE=15V; L=300uH

CE=0.8VCES; R =Roff=18

=25^o

150

120

0.5

250

270

0.8

Remarks:Switching times may increase

for VCE(Clamp) 0.8VCES' higher T or

increased R

Inductive load, T

=IC90; VGE=15V; L=300uH

CE=0.8VCES; R =Roff=18

=25^o

0.15

200

0.8

d(off)

Remarks:Switching times may increase

for VCE(Clamp) 0.8VCES' higher T or

off

increased R

IGBT

K/W

thJC

1.25

thCK

0.25

=25^o

C, unless otherwise specified)

Reverse Diode (FRED)

Symbol

Characteristic Values

Test Conditions

Unit

min.

typ.

max.

=15A; TVJ=150^o

VJ=25^o

1.3

2.5

=100V; IF=25A; -di

/dt=100A/us

0.05uH; TVJ=100^o

=1A; -di/dt=50A/us; V

=30V; T

=25^o

thJC

Diode

1.6

K/W

中文翻译

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