Datasheet > SG12N06T

SG12N06T

更新时间： 2022-12-22 08:42:45

品牌	Logo	应用领域
SIRECT		双极性晶体管
页数	文件大小	规格书
2页	109K
描述
Discrete IGBTs

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中文翻译

获取价格

数据手册

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SG12N06T 数据手册

SG12N06T, SG12N06DT

Discrete IGBTs

Dim.

Millimeter

Min. Max. Min.

Inches

Max.

Dimensions TO-247AD

19.81 20.32 0.780 0.800

20.80 21.46 0.819 0.845

15.75 16.26 0.610 0.640

3.55 3.65 0.140 0.144

G=Gate, C=Collector,

C(TAB)

E=Emitter,TAB=Collector

4.32 5.49 0.170 0.216

5.4

6.2 0.212 0.244

1.65 2.13 0.065 0.084

4.5

0.177

1.0

1.4 0.040 0.055

10.8 11.0 0.426 0.433

4.7

0.4

5.3 0.185 0.209

0.8 0.016 0.031

SG12N06DT

SG12N06T

1.5 2.49 0.087 0.102

Symbol

Test Conditions

Maximum Ratings

Unit

VCES

VCGR

TJ=25^oC to 150^oC

600

TJ=25^oC to 150^oC; RGE=1 M ;

VGES

VGEM

Continuous

Transient

±20

±30

IC25

IC90

ICM

TC=25^oC

TC=90^oC

TC=25^oC, 1 ms

VGE=15V; TVJ=125^oC; RG=33

ICM=24

@ 0.8 VCES

SSOA

(RBSOA)

Clamped inductive load, L=300uH

TC=25^oC

100

-55...+150

150

-55...+150

TJM

Tstg

^oC

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10s

300

Mounting torque with screw M3

Mounting torque with screw M3.5

0.45/4

0.55/5

Nm/Ib.in.

Weight

Characteristic Values

min. typ. max.

=25^o

C, unless otherwise specified)

Symbol

Test Conditions

Unit

BV^CES

=250uA; VGE=0V

=250uA; VCE=VGE

600

2.5

GE(th)

5.0

200

1.5

CES

CE=0.8VCES

GE=0V;

;

=25^o

=125^o

GES

CE=0V; VGE=±20V

=IC90; VGE=15V

±100

2.1

CE(sat)

中文翻译

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