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SG-730PCN67.0001MC3 PDF预览

SG-730PCN67.0001MC3

更新时间: 2024-10-30 08:25:23
品牌 Logo 应用领域
精工 - SEIKO /
页数 文件大小 规格书
3页 65K
描述
IC,CRYSTAL OSCILLATOR,1-CHANNEL,1.5MHZ-67MHZ,HYBRID,LLCC,4PIN,CERAMIC

SG-730PCN67.0001MC3 数据手册

 浏览型号SG-730PCN67.0001MC3的Datasheet PDF文件第2页浏览型号SG-730PCN67.0001MC3的Datasheet PDF文件第3页 
Crystal Oscillator (XO )  
SG – 730**N Series  
Preliminary  
Reflowable and high density mounting type SMD.(5×7 mm)  
Using the heat-resisting type AT cut quartz crystal.  
allows almost the same temperature soldering as universal SMD IC.  
Using C-MOS IC allows low current consumption.  
Operating supply voltage : 3.3 V or 5V.  
Output enable function can be used for low current consumption applications.  
Specifications  
„
1. Absolute Maximum Ratings  
Item  
Symbol  
C (3.3 V)  
H (5.0 V)  
Condition  
Supply voltage  
Input voltage  
Storage temperature  
Soldering condition  
VDD  
VIN  
TSTG  
TSOL  
-0.5 V to 7.0 V  
-0.5 V to VDD+0.3 V  
-40 °C to +125 °C  
VDD-GND  
OE or ST  
Under +240°C within 10 s x 2 times  
2. . Operating Condition  
Item  
Symbol  
C
H
Condition  
VDD-GND  
Supply voltage  
Operating temperature  
Output load  
VDD  
TOPT  
CL  
3.0 V ~ 3.6 V  
4.5 V ~ 5.5 V  
-40 °C to +85 °C  
15 pF Max.  
C-MOS level  
Condition  
3. Frequency Characteristics  
Item  
Symbol  
fo  
C
H
Output Frequency  
1.5MHz ~  
80.0MHz  
1.5MHz ~  
67.0MHz  
Frequency stability[×10-6]  
±25 Max.  
±50 Max.  
±100 Max.  
±50 Max.  
±100 Max.  
±10 Max.  
f/f  
S
B
C
L
o
-20 °C to +70 °C  
-40 °C to +85 °C  
M
Aging[×10-6]  
Ta=+25 °C, 10 year  
fA  
Note : Frequency stability is including calibration tolerance, reflow soldering drift,  
operating temperature range (TOPT), operating voltage range and load change (CL).  
4. Electrical Characteristic  
Item  
Symbol  
IDD  
C
H
Condition  
7mA Max.  
20 mA Max.  
40 mA Max.  
10 mA Max.  
15 µA Max.  
12 mA Max.  
No load, fo 32 MHz  
No load, 32 M < fo 67 MHz  
No load, 67 M < fo  
Supply current  
45 mA Max.  
-
Output disable current  
Start-up time  
IOE  
30 mA Max.  
-
OE=GND, fo =67 MHz  
ST=GND, 67 M < fo  
I
ST  
tOSC  
10 ms Max.  
90 % VDD to be 0 s  
SG-730**N Ver2001.09.07  

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