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SFP9630 PDF预览

SFP9630

更新时间: 2024-11-17 22:21:59
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
7页 250K
描述
Advanced Power MOSFET

SFP9630 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.36
雪崩能效等级(Eas):563 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (Abs) (ID):6.5 A
最大漏极电流 (ID):6.5 A最大漏源导通电阻:0.8 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT APPLICABLE
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):70 W
最大脉冲漏极电流 (IDM):26 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SFP9630 数据手册

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SFP9630  
Advanced Power MOSFET  
FEATURES  
BVDSS = -200 V  
RDS(on) = 0.8 W  
ID = -6.5 A  
Avalanche Rugged Technology  
Rugged Gate Oxide Technology  
Lower Input Capacitance  
Improved Gate Charge  
Extended Safe Operating Area  
Lower Leakage Current : -10 mA (Max.) @ VDS = -200V  
Low RDS(ON) : 0.581 W (Typ.)  
TO-220  
1
2
3
1.Gate 2. Drain 3. Source  
Absolute Maximum Ratings  
Symbol  
Characteristic  
Drain-to-Source Voltage  
Continuous Drain Current (TC=25oC)  
Continuous Drain Current (TC=100oC)  
Drain Current-Pulsed  
Value  
-200  
-6.5  
Units  
VDSS  
V
ID  
A
-4.0  
1
IDM  
VGS  
EAS  
IAR  
-26  
A
V
O
Gate-to-Source Voltage  
+
_
30  
2
O
Single Pulsed Avalanche Energy  
Avalanche Current  
563  
-6.5  
7.0  
mJ  
A
1
O
1
EAR  
dv/dt  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Total Power Dissipation (TC=25oC)  
Linear Derating Factor  
mJ  
V/ns  
W
O
3
O
-5.0  
70  
PD  
TJ , TSTG  
TL  
0.56  
W/oC  
Operating Junction and  
- 55 to +150  
300  
Storage Temperature Range  
Maximum Lead Temp. for Soldering  
oC  
Purposes, 1/8 “ from case for 5-seconds  
Thermal Resistance  
Symbol  
RqJC  
Characteristic  
Junction-to-Case  
Case-to-Sink  
Typ.  
Max.  
1.79  
--  
Units  
--  
0.5  
--  
oC/W  
RqCS  
RqJA  
Junction-to-Ambient  
62.5  
Rev. B  
©1999 Fairchild Semiconductor Corporation  

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