SMD Super Fast Recovery Rectifiers
Comchip
S M D D i o d e S p e c i a l i s t
SF1005-G Thru. SF1060-G
Reverse Voltage: 50 to 600 Volts
Forward Current: 10 Amp
RoHS Device
Features
ITO-220AB
0.189(4.80)
0.173(4.40)
0.118(3.00)
0.106(2.70)
-Low power loss,high efficiency.
0.138(3.50)
0.122(3.10)
-Low power voltage,high current capability.
-High surge capacity.
0.406(10.30)
0.386( 9.80)
0.118(3.00)
0.102(2.60)
-Super fast recouery time, high voltage.
-In compliance with EU RoHS 2002/95/EC directives.
-Exeeds environmental standards of MIL-S-19500/228
0.610(15.50)
0.571(14.50)
0.04 MAX
(1.0)
Mechanical data
0.157(4.00)
0.142(3.60)
-Epoxy: UL 94-V0 rated flame retardant.
0.059(1.50)
-Case: ITO-220AC molded plastic.
0.043(1.10)
0.571(14.50)
0.531(13.50)
-Terminals: Lead solderable per MIL-STD-750, method
2026.
0.030(0.76)
0.020(0.51)
0.030(0.76)
0.020(0.51)
-Polarity: As marked
-Weight: 1.56 grams approx.
-Standard packaging: Any
0.112(2.84)
0.088(2.24)
0.114(2.90)
0.098(2.50)
Dimensions in inches and (millimeter)
Maximun Ratings and Electrical Characteristics (at TA=25°C unless otherwise noted)
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SF
1005-G
SF
SF
SF
SF
SF
SF
Symbol
Parameter
Unit
1010-G 1020-G 1030-G 1040-G 1050-G 1060-G
Maximum Reverse Peak Repetitive Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
V
RRM
RMS
50
35
50
100
70
150
105
150
200
140
200
300
210
300
400
280
400
600
420
600
V
V
V
V
V
DC
100
Maximum Average Forward
Rectified Current @Tc=75°C
I(AV)
10
A
Peak Forward Surage Current ,
8.3ms Single Half Sine-Wave
I
FSM
150
A
V
Super Imposed On Rated Load (JEDEC METHOD)
Maximum Peak Forward Voltage at 10.0A ,
per element
V
F
0.95
25
1.30
1.70
@TJ=25°C
@TJ=100°C
Maximum DC Reverse Current
At Rate DC Blodking voltage
1
500
IR
μA
Max. Reverse recovery time ( Note 2)
Typical Junction capacitance (Note 1)
nS
Trr
35
CJ
62
3
PF
°C/W
°C
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
RθJC
TJ
-55 to +150
-55 to +150
T
STG
°C
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0VDC.
2. Reverse recovery test conditions: IF=0.5A, IR=1A, IRR=0.25A
3. Both bonding and chip structure available.
REV:A
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QW-BS006
Comchip Technology CO., LTD.