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SF1005-G PDF预览

SF1005-G

更新时间: 2024-11-12 07:17:55
品牌 Logo 应用领域
上华 - COMCHIP 整流二极管
页数 文件大小 规格书
3页 71K
描述
SMD Super Fast Recovery Rectifiers

SF1005-G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.84
Is Samacsys:N配置:SINGLE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.95 V
最大非重复峰值正向电流:150 A元件数量:1
最高工作温度:150 °C最大输出电流:10 A
最大重复峰值反向电压:50 V最大反向恢复时间:0.025 µs
子类别:Rectifier Diodes表面贴装:NO
Base Number Matches:1

SF1005-G 数据手册

 浏览型号SF1005-G的Datasheet PDF文件第2页浏览型号SF1005-G的Datasheet PDF文件第3页 
SMD Super Fast Recovery Rectifiers  
Comchip  
S M D D i o d e S p e c i a l i s t  
SF1005-G Thru. SF1060-G  
Reverse Voltage: 50 to 600 Volts  
Forward Current: 10 Amp  
RoHS Device  
Features  
ITO-220AB  
0.189(4.80)  
0.173(4.40)  
0.118(3.00)  
0.106(2.70)  
-Low power loss,high efficiency.  
0.138(3.50)  
0.122(3.10)  
-Low power voltage,high current capability.  
-High surge capacity.  
0.406(10.30)  
0.386( 9.80)  
0.118(3.00)  
0.102(2.60)  
-Super fast recouery time, high voltage.  
-In compliance with EU RoHS 2002/95/EC directives.  
-Exeeds environmental standards of MIL-S-19500/228  
0.610(15.50)  
0.571(14.50)  
0.04 MAX  
(1.0)  
Mechanical data  
0.157(4.00)  
0.142(3.60)  
-Epoxy: UL 94-V0 rated flame retardant.  
0.059(1.50)  
-Case: ITO-220AC molded plastic.  
0.043(1.10)  
0.571(14.50)  
0.531(13.50)  
-Terminals: Lead solderable per MIL-STD-750, method  
2026.  
0.030(0.76)  
0.020(0.51)  
0.030(0.76)  
0.020(0.51)  
-Polarity: As marked  
-Weight: 1.56 grams approx.  
-Standard packaging: Any  
0.112(2.84)  
0.088(2.24)  
0.114(2.90)  
0.098(2.50)  
Dimensions in inches and (millimeter)  
Maximun Ratings and Electrical Characteristics (at TA=25°C unless otherwise noted)  
Ratings at 25°C ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
SF  
1005-G  
SF  
SF  
SF  
SF  
SF  
SF  
Symbol  
Parameter  
Unit  
1010-G 1020-G 1030-G 1040-G 1050-G 1060-G  
Maximum Reverse Peak Repetitive Voltage  
Maximum RMS Bridge Input Voltage  
Maximum DC Blocking Voltage  
V
RRM  
RMS  
50  
35  
50  
100  
70  
150  
105  
150  
200  
140  
200  
300  
210  
300  
400  
280  
400  
600  
420  
600  
V
V
V
V
V
DC  
100  
Maximum Average Forward  
Rectified Current @Tc=75°C  
I(AV)  
10  
A
Peak Forward Surage Current ,  
8.3ms Single Half Sine-Wave  
I
FSM  
150  
A
V
Super Imposed On Rated Load (JEDEC METHOD)  
Maximum Peak Forward Voltage at 10.0A ,  
per element  
V
F
0.95  
25  
1.30  
1.70  
@TJ=25°C  
@TJ=100°C  
Maximum DC Reverse Current  
At Rate DC Blodking voltage  
1
500  
IR  
μA  
Max. Reverse recovery time ( Note 2)  
Typical Junction capacitance (Note 1)  
nS  
Trr  
35  
CJ  
62  
3
PF  
°C/W  
°C  
Typical Thermal Resistance  
Operating Temperature Range  
Storage Temperature Range  
RθJC  
TJ  
-55 to +150  
-55 to +150  
T
STG  
°C  
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0VDC.  
2. Reverse recovery test conditions: IF=0.5A, IR=1A, IRR=0.25A  
3. Both bonding and chip structure available.  
REV:A  
Page 1  
QW-BS006  
Comchip Technology CO., LTD.  

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