Datasheet > SF1006CT

SF1006CT

更新时间： 2024-09-24 02:54:23

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平伟 - PINGWEI		/
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描述
10A Superfast Recovery Rectifier

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数据手册

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SF1006CT 数据手册

SF1004(F,B,H)CT thru SF1008(F,B,H)CT

10A Superfast Recovery Rectifier

FEATURE



High current capability

Low forward voltage drop

Low power loss, high efficiency

High surge capability

High ESD capability

TO-220AB

SF10XXCT

ITO-220AB

High temperature soldering guaranteed:

260°C/10s/0.25"(6.35mm) from case

SF10XXFCT

MECHANICAL DATA



Case: Molded with UL-94 Class V-0 recognized Flame

Retardant Epoxy



Mounting position: any

TO-263

TO-262

TYPICALAPPLICATIONS

SF10XXBCT

SF10XXHCT

For use in low voltage, high frequency rectifier of switching mode

power supplies, freewheeling diodes, DC/DC converters and

polarity protection application.

Ratings at 25°C ambient temperature unless otherwise specified, Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

MAXIMUM RATINGS

SF1004CT

SF1006CT

SF1008CT

Parameter

Symbol

units

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

V_RRM

V_RMS

V_DC

200

140

200

400

280

400

10.0

5.0

600

420

600

Maximum DC Blocking Voltage

Maximum Average Forward Rectified

Current at T_C=90°C

total device

per diode

I_F(AV)

I_FSM

Peak Forward Surge Current 8.3ms Single Half sine-wave

superimposed on rate load per diode (JEDEC method)

Maximum Reverse Recovery Time (Note 1)

Junction Capacitance (Note2)

t_rr

C_J

°C

Storage Temperature Range

T_STG

T_J

-55 to +150

Operation Temperature Range

ELECTRONICAL CHARACTERISTICS

SF1004CT

SF1006CT

SF1008CT

Parameter

Symbol

units

Maximum Forward Voltage Drop per diode at 5A (Note 3)

V_F

I_R

1.0

1.3

10.0

400.0

1.7

@ T_C=25°C

@ T_C=100°C

Maximum DC Reverse Current at rated

DC blocking voltage (Note 3)

μA

THERMAL CHARACTERISTICS

TO-262

TO-263

ITO-220

TO-220

units

Parameter

Symbol

Typical Thermal Resistance (Note 4)

R_{th (JC)}

3.5

2.5

°C/W

Note:

1. Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A

2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc.

3. Pulse test: 300 μs pulse width, 1% duty cycle.

4. Thermal Resistance from Junction to Case Mounted on heatsink.

- 页码 -

Rev. 14-1

http:// www.perfectway.cn

中文翻译

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